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Microscopic C-V measurements of SOI wafers by scanning capacitance microscopy

Published online by Cambridge University Press:  15 July 2004

T. Ishida ,
H. Yoshida  and
S. Kishino
T. Ishida
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji 671-2201, Japan
H. Yoshida*
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji 671-2201, Japan
S. Kishino
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji 671-2201, Japan
*
[email protected]
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Abstract

Scanning capacitance microscopy (SCM) has been applied to microscopic characterization of electrical properties of silicon-on-insulator (SOI) wafers. Two kinds of capacitance-voltage (C-V) methods have been proposed for separately characterizing the electrical properties of a gate oxide, an SOI layer, a buried oxide (BOX) layer, a Si substrate, and their interfaces: (i) a front-gate C-V method whereby the electrical properties of the gate oxide and front SOI (the gate oxide/SOI) interface can be characterized, and (ii) a back-gate C-V method for the characterization of the electrical properties of the BOX layer, back SOI (the BOX/SOI) interface, and the BOX/Si substrate interface. Furthermore, SCM images of the sampled SOI wafer have been obtained for visualizing the microscopic spatial distribution of electrical properties of SOI wafers by using the proposed C-V methods. These SCM images revealed the fluctuation in the oxide charges and interface traps. SCM has been demonstrated to be an effective tool for microscopic electrical characterization of SOI wafers.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 479 - 482
Copyright
© EDP Sciences, 2004

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