We present optoelectronic characteristics of organic light-emitting devicesrealized by Ion Beam Assisted Deposition (IBAD) of Alq3 (8-hydroxyquinoline aluminum)layer between an ITO anode and a Ca/Al cathode. The ion type is Iodine ion and thestudy against the ion beam energy (contained between 50 eV and 150 eV) indicates anoptimization of the optoelectronic properties (internal quantum efficiency andluminance) at 100 eV while the optimized localization of the assisted layer is thearea 25–50 nm. The characteristics log (J) =f (log [V]) indicates that theinjection process takes place by trapped-charge-limited current and an estimation ofthe trap density N t leads to N t ≈ 10 14 cm−3; the enhancedoptoelectronic properties of devices obtained by IBAD are attributed to the limitationof quenching sites in the recombination area and also to charge carrier confinement atthe interface assisted layer and virgin (non-assisted) layer.