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Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Si

Published online by Cambridge University Press:  14 February 2014

Konstantinos Pantzas ,
Eric Le Bourhis ,
Gilles Patriarche ,
Ahmad Itawi ,
Grégoire Beaudoin ,
Isabelle Sagnes  and
Anne Talneau
Konstantinos Pantzas*
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France Institut P’, CNRS-Université de Poitiers-ENSMA-UPR3346, SP2MI-Téléport, 2 Bd. Marie et Pierre Curie, BP 30179, 86962 Futuroscope-Chasseneuil Cedex, France
Eric Le Bourhis
Affiliation:
Institut P’, CNRS-Université de Poitiers-ENSMA-UPR3346, SP2MI-Téléport, 2 Bd. Marie et Pierre Curie, BP 30179, 86962 Futuroscope-Chasseneuil Cedex, France
Gilles Patriarche
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
Ahmad Itawi
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
Grégoire Beaudoin
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
Isabelle Sagnes
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
Anne Talneau
Affiliation:
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
*
ae-mail: [email protected]
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Abstract

Instrumented nanoindentation and STEM have been combined ex situ to study the adhesion of 450 nm thick InP membranes to Si substrates. Three distinct regimes are identified in the deformation of the InP/Si stacks during these experiments: the first is plastic flow of InP at low loads; the second is elastic debonding of the InP membrane, far from the indented zone at medium loads; lastly, the local amorphisation of the underlying Si substrate at high loads. The regime of intermediate loads is shown to be particularly useful in the evaluation of the surface bonding energy of InP to Si.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 65 , Issue 2 , February 2014 , 20702
Copyright
© EDP Sciences, 2014

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