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In-plane strain states of standard and flip-chip GaN epilayers

Published online by Cambridge University Press:  13 April 2011

Z. Y. Zuo ,
D. Liu ,
R. J. Wang ,
S. B. Qin ,
H. Liu  and
X. G. Xu
Z. Y. Zuo
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
D. Liu*
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
R. J. Wang
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
S. B. Qin
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
H. Liu
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
X. G. Xu
Affiliation:
State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong, 250100, P.R. China
*
[email protected]
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Abstract

We report here a comparative study of the in-plane strain states of standard GaN epilayer grown on sapphire (001) and flip-chip GaN epilayer bonded on Si (111) wafer by means of X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. It is confirmed that the in-plane tensile strains can be largely reduced after the flip-chip process. The reduction of the biaxial strains determined by XRD, Raman, and PL analysis is found to be consistent.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 54 , Issue 1 , April 2011 , 10101
Copyright
© EDP Sciences, 2011

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