The use of gettering techniques that can be precisely localized in the component, such as neutral element implantation, has become crucial for power device manufacturing. High-dose helium implantation in silicon with a subsequent annealing induces defects (cavities and dislocations) which are able to getter metallic impurities and interact with dopants. These interactions can become a drawback of this technique. In this work, Si wafers $\langle 111\rangle$-oriented, p-doped with a concentration in between 6 × 1014 and 8 × 1018 B/cm3, were used. Iron contamination was performed by backside implantation (100 keV and 1012 Fe cm−2). Helium implantation was performed at 40 keV and 5 × 1016 at cm−2 at room temperature and followed by a Furnace Annealing (FA) stage. Secondary Ion Mass Spectrometry (SIMS) was used to study the dopant/metal/cavity layer system. In this paper, we will focus on the cavity layer interactions with both metals and dopant impurities. Our experimental results exhibit a large segregation of both species within the cavity layer that occurs during the annealing stage. Both species segregate simultaneously in helium-implanted samples without interacting one to the other. The number of gettering sites does not limit the trapping reactions.