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Full characterization at 904 nm of large area Si p-n junction photodetectors produced by LID technique

Published online by Cambridge University Press:  31 January 2007

R. A. Ismail ,
O. A. Abdulrazaq ,
A. A. Hadi  and
O. A. Hamadi
R. A. Ismail
Affiliation:
Solar Cells and Applied Physics Center, Ministry of Science and Technology, Baghdad, Iraq
O. A. Abdulrazaq
Affiliation:
NASSR State Company, Ministry of Industry and Minerals, Baghdad, Iraq
A. A. Hadi
Affiliation:
School of Applied Sciences, University of Technology, Baghdad, Iraq
O. A. Hamadi*
Affiliation:
PO Box 55159, Baghdad 12001, Iraq
*
[email protected]
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Abstract

In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al-doped Si and 10.03 J/cm2 for Sb-doped Si at substrate temperature (T s ) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when T s is raised from 300 K to 598 K.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 38 , Issue 3 , June 2007 , pp. 197 - 201
Copyright
© EDP Sciences, 2007

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