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Evolution of photoluminescence life-times distribution in Si-QD/SiO2 multilayer films

Published online by Cambridge University Press:  11 June 2013

Xinzhan Wang ,
Yumei Liu ,
Huina Feng ,
Wanlei Dai ,
Yanmei Xu ,
Wei Yu  and
Guangsheng Fu
Xinzhan Wang
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Yumei Liu
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Huina Feng
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Wanlei Dai
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Yanmei Xu
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Wei Yu*
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
Guangsheng Fu*
Affiliation:
College of Physics Science and Technology, Hebei University, Baoding 071002, P.R. China
*
ae-mail: [email protected]
be-mail: [email protected]
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Abstract

Si-rich oxide/SiO2 multilayer films with different N2O flow rates have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dot (Si-QD)/SiO2 multilayer films are obtained by 1100 °C annealing. Steady photoluminescence (PL) spectra show that the main optical emission mechanism changes from quantum confinement effect of Si-QDs to interface defect states with increasing the flow rate of N2O. Curve fittings of time-resolved PL spectra show that two log-normal decay time distribution bands are obtained, and both the most frequent life-times decrease with increasing the flow rate of N2O, while increase with the red shift of detecting wavelength. Analyses indicate that defect states density and size distribution of Si-QDs strongly influence the PL decay properties.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 3 , June 2013 , 30303
Copyright
© EDP Sciences, 2013

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