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Energy gap of strained graphene with tight-binding model

Published online by Cambridge University Press:  08 October 2010

C. Yang ,
W. Shaofeng  and
X. Hong
C. Yang*
Affiliation:
College of Mathematics and Science in Chongqing University, Chongqing, 400044, P.R. China
W. Shaofeng
Affiliation:
College of Mathematics and Science in Chongqing University, Chongqing, 400044, P.R. China
X. Hong
Affiliation:
College of Mathematics and Science in Chongqing University, Chongqing, 400044, P.R. China
*
[email protected]
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Abstract

The tight-binding model is used to inquire the uniaxial strain effect on the electronic structure of 2D graphene sheet and quasi-1D armchair graphene nanoribbons. The dependence of Dirac points and gap on the uniaxial strain is investigated. The band edges deviate from the corners of the first Brillouin Zone (BZ) gradually with the strain applied. The gap can be opened only when graphene sheet is highly strained. The threshold of the gap induced by strain along armchair directions distinguishes from that by strain along zigzag direction. A controlled strain can be applied to achieve the semiconductor-metal transition in armchair graphene ribbons.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 52 , Issue 2: Focus on Numelec , November 2010 , 20601
Copyright
© EDP Sciences, 2010

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