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Electrical and photovoltaic properties of heterojunction diode based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

Published online by Cambridge University Press:  26 November 2012

Mujdat Caglar
Mujdat Caglar*
Affiliation:
Department of Physics, Anadolu University, Eskisehir 26470, Turkey
*
ae-mail: [email protected]
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Abstract

n-Si/p-PEDOT-PSS heterojunction diode was fabricated by deposition of poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) onto n-type Si wafer using spin coating. Its electrical properties of the diode were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The field emission scanning electron microscopy (FE-SEM) was used to determine the surface quality. SEM result indicates that the surface morphology of the PEDOT-PSS film spin coated on n-Si substrate is almost homogeneous. Diode parameters such as the ideality factor, barrier height and series resistance were calculated using Cheung’s method and C-V measurements. I-V characteristics under dark and illumination conditions were performed to characterize the photovoltaic behavior of the diode.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 3 , December 2012 , 30102
Copyright
© EDP Sciences, 2012

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