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Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering*

Published online by Cambridge University Press:  15 August 2000

T. Haccart ,
E. Cattan  and
D. Rèmiens
T. Haccart*
Affiliation:
Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut Cambrésis (UVHC), CRITT Céramiques Fines, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France
E. Cattan
Affiliation:
Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut Cambrésis (UVHC), CRITT Céramiques Fines, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France
D. Rèmiens
Affiliation:
Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut Cambrésis (UVHC), CRITT Céramiques Fines, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France
*
[email protected]
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Abstract

Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films have been grown on platinized silicon substrates by RF magnetron sputtering followed by a post-annealing treatment. The niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.% The effects of the Nb introduction on the PZT electrical properties, i.e., dielectric and ferroelectric ones have been investigated. We have found that the relative dielectric constant $(\varepsilon_{\rm r})$ is very sensitive to the Nb introduction; $(\varepsilon_{\rm r})$ reaches 1100 for a PNZT film doped at 2 at.% in comparison to 820 for a PZT film. The ferroelectric properties are also dependent of the doping level; in particular the remnant polarization reaches its maximum value ($17 \mu$C/cm2) for a 2 at.% Nb doped PZT film.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 11 , Issue 2 , August 2000 , pp. 103 - 106
Copyright
© EDP Sciences, 2000

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Footnotes

*

This work has been presented at the 3rd SEE meeting (16-17 September 1999. INSA-Lyon, France).

References

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