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Effects of focus lens position on pulsed laser deposition of ZnO films

Published online by Cambridge University Press:  25 May 2006

M. Liu ,
G. Sun ,
Z. G. Zhang ,
X. Q. Wei ,
C. S. Chen ,
C. S. Xue  and
B. Y. Man
M. Liu
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
G. Sun
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
Z. G. Zhang
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
X. Q. Wei
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
C. S. Chen
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
C. S. Xue
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
B. Y. Man*
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, 250014, China
*
[email protected]
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Abstract

ZnO thin films have been deposited on Si(111) substrates at different positions of the focusing lens by pulsed laser deposition (PLD) of a ZnO target in an oxygen atmosphere. The strong influence of the position of the focusing lens on the deposition rate, crystallinity, surface morphology and optical properties of the deposited ZnO thin films are studied. The results show that the ZnO thin films deposited at lens-target distance $(D_{l-t}) =59.5$  cm (the focal length is 70 cm) have the highest deposition rate and crystalline quality. The photoluminescence (PL) spectrum with the strongest ultraviolet (UV) peak and blue peak is observed in this condition. Moreover, the results of scanning electron microscopy (SEM) and selected area electron diffraction (SEAD) indicate that the films deposited at this lens position show the transition from monocrystalline to polycrystalline. Perfect monocrystalline ZnO films are obtained only when D l-t is changed in the range from 63 cm to the focus position.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 34 , Issue 2: 15th International Colloquium on Plasma processes (CIP 2005) , May 2006 , pp. 73 - 76
Copyright
© EDP Sciences, 2006

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