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Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

Published online by Cambridge University Press:  15 July 2004

N. Kamata ,
H. Klausing ,
F. Fedler ,
D. Mistele ,
J. Aderhold ,
O. K. Semchinova ,
J. Graul ,
T. Someya  and
Y. Arakawa
N. Kamata*
Affiliation:
Dept. of Functional Materials Science, Saitama University, Saitama-shi, Saitama 338-8570, Japan
H. Klausing
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
F. Fedler
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
D. Mistele
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
J. Aderhold
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
O. K. Semchinova
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
J. Graul
Affiliation:
Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
T. Someya
Affiliation:
Research Center for Advanced Science and Techn., Univ. of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
Y. Arakawa
Affiliation:
Research Center for Advanced Science and Techn., Univ. of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
*
[email protected]
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Abstract

In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's, we focused on several undoped and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 271 - 273
Copyright
© EDP Sciences, 2004

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