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Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor

Published online by Cambridge University Press:  24 March 2014

Jin-Hyuk Kwon ,
In Man Kang  and
Jin-Hyuk Bae
Jin-Hyuk Kwon
Affiliation:
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea
In Man Kang
Affiliation:
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea
Jin-Hyuk Bae*
Affiliation:
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Republic of Korea
*
ae-mail: [email protected]
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Abstract

We demonstrate how the sub-threshold characteristics are affected by the density of crystalline domain boundaries directly governed by an organic semiconductor (OSC) – a gate insulator interface in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin-film transistor (TFT). For generation of an engineered interface, a self assembled monolayer of octadecyltricholorosilane (OTS) was produced between a solution processed TIPS-pentacene film and a silicon dioxide layer. The interfacial charge trap density (Ntrap) deduced from the sub-threshold characteristics was significantly minimized after OTS treatment due to reduced crystal domain boundaries in the TIPS-pentacene film. In addition, the carrier mobility exhibits a value twice as large by OTS treatment. It is found that less crystal domain boundaries in the solution-processed OSC obtained from the engineered interface play an important role in inducing improved sub-threshold characteristics together with increased carrier mobility in organic TFTs.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 65 , Issue 3 , March 2014 , 30202
Copyright
© EDP Sciences, 2014

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