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Effect of annealing temperature on properties of ZnO thin films on Si(111) substrates by magnetron sputtering

Published online by Cambridge University Press:  06 October 2006

Shoubin Xue ,
Huizhao Zhuang ,
Chengshan Xue ,
Shuyun Teng  and
Lijun Hu
Shoubin Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Huizhao Zhuang*
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Chengshan Xue
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Shuyun Teng
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
Lijun Hu
Affiliation:
Institute of Semiconductor, Shandong Normal University, Jinan 250014, P.R. China
*
[email protected]
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Abstract

ZnO thin films were firstly prepared on Si(111) substrates using radio frequency magnetron sputtering system. Then the samples were annealed at different temperature in oxygen ambient and their properties were investigated particularly as a function of annealing temperature. The microstructure, morphology and optical property of ZnO films were studied by XRD, AFM, FTIR and PL. The results show that the increase of annealing temperature leads to the improvement in the crystal quality.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 36 , Issue 1 , October 2006 , pp. 1 - 4
Copyright
© EDP Sciences, 2006

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