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Effect of annealing on properties of CuInS2 thin films

Published online by Cambridge University Press:  14 April 2005

R. Brini ,
M. Kanzari ,
B. Rezig  and
J. Werckmann
R. Brini*
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs (LPMS), École Nationale d'Ingénieurs de Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia
M. Kanzari
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs (LPMS), École Nationale d'Ingénieurs de Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia
B. Rezig
Affiliation:
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs (LPMS), École Nationale d'Ingénieurs de Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia
J. Werckmann
Affiliation:
Institut de Physique et Chimie des Matériaux, Strasbourg, France
*
[email protected]
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Abstract

Surface morphology, structural and optical properties of CuInS2 thin films grown by the single source thermal evaporation in vacuum have been studied. The films were annealed from 250 to 550 °C in argon atmosphere with low oxygen concentration (O2 < 2 ppm). CuInS2 films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and optical transmittance and reflectance spectra. The maximum grain size of the sample after annealing at 550 °C was over 150 nm. The electron dispersion spectroscopy and X-ray analysis concludes that the polycrystalline CuInS2 thin film after annealing above 200 °C were sulphur-poor. We obtain CuInS2 layers with high structural and optical quality at annealing temperature above 450 °C with formation of In2O3 as minority phase. The band gap energy of the CuInS2 films after annealing above 450 °C was about 1.50 eV which perfectly matches the solar spectrum for energy conversion.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 30 , Issue 3 , June 2005 , pp. 153 - 158
Copyright
© EDP Sciences, 2005

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