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Ebic contrast in a polycrystalline semiconductor: Grain size dependence*
Published online by Cambridge University Press: 15 October 1999
Abstract
Using the perturbation method (Born approximation), a theoretical model has been developed to account for the EBIC intensities and contrasts likely to occur in an n-type polycrystalline semiconductor, as a function of the grain size. The influence of the minority charge carrier diffusion length and the primary electron beam energy have also been examined, respectively.
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- Research Article
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- © EDP Sciences, 1999