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Ebic contrast in a polycrystalline semiconductor: Grain size dependence*

Published online by Cambridge University Press:  15 October 1999

M. C. Talai ,
D. E. Mekki  and
R. J. Tarento
M. C. Talai
Affiliation:
Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria
D. E. Mekki
Affiliation:
Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria
R. J. Tarento
Affiliation:
Université de Paris-Sud, LPS, btiment 510, 91405 Orsay, France
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Abstract

Using the perturbation method (Born approximation), a theoretical model hasbeen developed to account for the EBIC intensities and contrasts likely to occur in ann-type polycrystalline semiconductor, as a function of the grain size. The influenceof the minority charge carrier diffusion length and the primary electron beam energyhave also been examined, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 1 , October 1999 , pp. 1 - 5
Copyright
© EDP Sciences, 1999

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