Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Loureiro, J
Sá, P A
and
Guerra, V
2001.
Role of long-lived N2(X1Σg+,v) molecules and N2(A3Σu+) and N2(a'1Σu-) states in the light emissions of an N2afterglow.
Journal of Physics D: Applied Physics,
Vol. 34,
Issue. 12,
p.
1769.
Guerra, V.
Sá, P. A.
and
Loureiro, J.
2001.
Relaxation of the electron energy distribution function in the afterglow of aN2microwave discharge including space-charge field effects.
Physical Review E,
Vol. 63,
Issue. 4,
Clément, F.
Held, B.
and
Soulem, N.
2002.
Polystyrene thin films treatment under DC pulsed discharges conditions in nitrogen-argon and oxygen-argon mixtures.
The European Physical Journal Applied Physics,
Vol. 17,
Issue. 2,
p.
119.
Clément, F.
Held, B.
Soulem, N.
and
Guimon, C.
2002.
XPS analyses of polystyrene thin films treated under DC pulsed discharges conditions in nitrogen, oxygen and oxygen-argon mixtures.
The European Physical Journal Applied Physics,
Vol. 18,
Issue. 2,
p.
135.
Basillais, Armelle
Boulmer-Leborgne, Chantal
Mathias, Jacky
and
Perrière, Jacques
2002.
Influence of the growth conditions of AlN and GaN films by reactive laser ablation.
Applied Surface Science,
Vol. 186,
Issue. 1-4,
p.
416.
Itagaki, N.
Iwata, S.
Muta, K.
Yonesu, A.
Kawakami, S.
Ishii, N.
and
Kawai, Y.
2003.
Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma.
Thin Solid Films,
Vol. 435,
Issue. 1-2,
p.
259.
Larrieu, J.
Held, B.
Clément, F.
Soulem, N.
and
Dubois, D.
2004.
DC pulsed plasma surface treatment of polystyrene thin films with nitrogen: study of the correlation between energy distribution and wettability.
The European Physical Journal Applied Physics,
Vol. 26,
Issue. 2,
p.
113.
Larrieu, J.
Held, B.
Soulem, N.
and
Spyrou, N.
2005.
Polystyrene thin films treatment under DC pulsed discharge in nitrogen: effect of sample placement and glow duration on the wettability.
The European Physical Journal Applied Physics,
Vol. 29,
Issue. 2,
p.
181.
Basillais, A.
Benzerga, R.
Sanchez, H.
Le Menn, E.
Boulmer-Leborgne, C.
and
Perrière, J.
2005.
Improvement of the PLD process assisted by RF plasma for AlN growth.
Applied Physics A,
Vol. 80,
Issue. 4,
p.
851.
Saloum, S
Naddaf, M
and
Alkhaled, B
2008.
Diagnostics of N2–Ar plasma mixture excited in a 13.56 MHz hollow cathode discharge system: application to remote plasma treatment of polyamide surface.
Journal of Physics D: Applied Physics,
Vol. 41,
Issue. 4,
p.
045205.
Kuo, Ming-Shu
Hua, Xuefeng
Oehrlein, G. S.
Ali, A.
Jiang, P.
Lazzeri, P.
and
Anderle, M.
2010.
Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralow k materials modifications.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena,
Vol. 28,
Issue. 2,
p.
284.
Khan, F. U.
Rehman, N. U.
Naseer, S.
Naz, M. Y.
Khattak, N. A. D.
and
Zakaullah, M.
2011.
Effect of Excitation and Vibrational Temperature on the Dissociation of Nitrogen Molecules in Ar-N2Mixture RF Discharge.
Spectroscopy Letters,
Vol. 44,
Issue. 3,
p.
194.
Lebedev, Yu. A.
Tatarinov, A. V.
and
Epstein, I. L.
2019.
Effect of Nitrogen Additive on Inhomogeneous Microwave Discharge in Hydrogen at Reduced Pressures.
Plasma Physics Reports,
Vol. 45,
Issue. 4,
p.
397.
Chatain, Audrey
Morillo-Candas, Ana Sofia
Vettier, Ludovic
Carrasco, Nathalie
Cernogora, Guy
and
Guaitella, Olivier
2023.
Characterization of a DC glow discharge in N2–H2with electrical measurements and neutral and ion mass spectrometry.
Plasma Sources Science and Technology,
Vol. 32,
Issue. 3,
p.
035002.