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Diminution of the activity of B atoms by H-induced defects inH2 and B2H6 co-implanted Si

Published online by Cambridge University Press:  15 July 2004

Katsuhiro Yokota ,
Syuusaku Nakase ,
Kazuhiro Nakamura ,
Fumiyoshi Miyashita ,
Masayasu Tannjou ,
Shigeki Sakai  and
Hiromichi Takano
Katsuhiro Yokota*
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Syuusaku Nakase
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Kazuhiro Nakamura
Affiliation:
Faculty of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
Fumiyoshi Miyashita
Affiliation:
Faculty of Informatics, Kansai University, Takatsuki, Osaka, 569-1095, Japan
Masayasu Tannjou
Affiliation:
Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
Shigeki Sakai
Affiliation:
Nissin Electric Co., Kujo-Tonoshiro, Minami-ku, Kyoto 601-8205, Japan
Hiromichi Takano
Affiliation:
Kanagawa High-Technology Foundation, Kanagawa Science Park, Kawasaki, Kanagawa 213-0012, Japan
*
[email protected]
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Abstract

Diborane and hydrogen ions were co-implanted into silicon using an implanter without an ion analyzer. The samples were annealed at 1000 °C for 30 min in argon atmosphere. Regions containing carriers became narrower with an increasing fraction of H2 gas in the source mixed gas: for example, carriers were limited only in a narrow region from the surface to $0.3\;\mu$m on silicon implanted with a mixed gas of 57% H2–43% B2H6. The width of the region containing carriers was approximately double that ($\sim 0.6\;\mu$m) on B-implanted silicon. On the other hand, the width of the region containing B atoms on the H2 and B2H6 co-implanted silicon were slightly narrower than that on B-implanted silicon. The region containing inactivated B atoms had a large number of defects and small crystallites.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 129 - 132
Copyright
© EDP Sciences, 2004

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