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Development of an UV scanning photoluminescence apparatus for SiC characterization*

Published online by Cambridge University Press:  25 October 2002

L. Masarotto
Affiliation:
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex, France
J. M. Bluet*
Affiliation:
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex, France
M. Berenguer
Affiliation:
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex, France
P. Girard
Affiliation:
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex, France
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Abstract

We have adapted a scanning photoluminescence (SPL) apparatus, previously developed for III-V compounds analysis, for the characterization of SiC. The PL mapping is obtained by scanning the sample, fixed to an x-y stage with 1 μm minimal step, under a doubled Ar+ laser beam (244 nm) focused by a microscope objective (×52). For this excitation the spot diameter is about 4 μm. The PL signal can be either directly detected, giving integrated PL intensity, either dispersed using a monochromator, giving spectrally resolved PL (1 nm resolution). The measurements can be realized at room temperature for near band edge studies, or at low temperature (80 K) for deep defects investigation. The gettering effect of non radiative centres by the screw dislocations in 6H-SiC is evidenced using this apparatus.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2002

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Footnotes

*

This paper has been first presented orally at the C2I colloquium in February 2001

References

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