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Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

Published online by Cambridge University Press:  15 July 2004

A. Misiuk ,
B. Surma  and
J. Bak-Misiuk
A. Misiuk*
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
B. Surma
Affiliation:
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
J. Bak-Misiuk
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
*
[email protected]
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Abstract

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–1000 K under 105 Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence, infrared absorption and related methods. Microstructure of HT − HP treated Cz-Si is critically dependent on nucleation centres for oxygen precipitation created by pre-annealing.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 301 - 303
Copyright
© EDP Sciences, 2004

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References

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