Hostname: page-component-6bf8c574d5-pdxrj Total loading time: 0 Render date: 2025-03-09T23:35:40.202Z Has data issue: false hasContentIssue false
  • English
  • Français

The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structures

Published online by Cambridge University Press:  31 August 2007

L. F. Mao ,
Z. O. Wang ,
J. Y. Wang  and
C. Y. Zhu
L. F. Mao*
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
Z. O. Wang
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
J. Y. Wang
Affiliation:
Institute of Microelectronics Peking University, Beijing 100871, P.R. China
C. Y. Zhu
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
*
[email protected]
Get access

Abstract

Based on the first-principles simulations, the oxygen vacancies in the ultrathin HfO2 layer as the gate dielectric in a metal-oxide-semiconductor structure is found to result in the conductionband offset alignment around the vacancy. Thus an increase in the gate leakage current tunneling current comes when the oxygen vacancies appear in the HfO2 layer wherever the oxygen vacancies locate. The relative increase in the tunneling current caused by the oxygen vacancies slightly change with the increasing oxide thickness for a low oxide electric field.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 40 , Issue 1 , October 2007 , pp. 59 - 63
Copyright
© EDP Sciences, 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

H. Kim, P. McIntyre, K.C. Saraswat, Appl. Phys. Lett. 82, 106 ( 2003)
Cho, M.-H., Roh, Y.S., Whang, C.N., Jeong, K., Nahm, S.W., Ko, D.-H., Lee, J. H., Lee, N.I., Fujihara, K., Appl. Phys. Lett. 81, 47 (2003)
Puthenkovilakam, R., Chang, J.P., J. Appl. Phys. 96, 2701 (2004) CrossRef
Garcia, J.C., Lino, A.T., Scolfaro, L.M.R., Leite, J.R., Freire, V.N., Farias, G.A., da Silva Jr, E.F., AIP Conf. Proc. 772, 189 (2005) CrossRef
Zhao, X., Vanderbilt, D., Phys. Rev. B 65, 233106 (2002) CrossRef
Maida, O., Fukayama, K., Takahashi, M., Kobayashi, H., Kim, Y., Kim, H., Choi, D., Appl. Phys. Lett. 89, 122112 (2006) CrossRef
Ferrari, S., Spiga, S., Wiemer, C., Fanciulli, M., Dimoulas, A., Appl. Phys. Lett. 89, 122906 (2006) CrossRef
Ikarashi, N., Watanabe, K., Masuzaki, K., Nakagawa, T., Miyamura, M., J. Appl. Phys. 100, 063507 (2006) CrossRef
Miyata, N., Appl. Phys. Lett. 89, 102903 (2006) CrossRef
Gavartin, J.L., Muñoz Ramo, D., Shluger, A.L., Bersuker, G., Lee, B.H., Appl. Phys. Lett. 89, 082908 (2006) CrossRef
Hakala, M.H., Foster, A.S., Gavartin, J.L., Havu, P., Puska, M.J., Nieminen, R.M., J. Appl. Phys. 100, 043708 (2006) CrossRef
Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Oshima, M., Ikeda, K., Liu, G.L., Liu, Z., Usuda, K., Appl. Phys. Lett. 89, 012102 (2006) CrossRef
Cho, M.-H., Chung, K.B., Whang, C.N., Ko, D.-H., Lee, J.H., Lee, N.I., Appl. Phys. Lett. 88, 202902 (2006) CrossRef
Wang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H., Appl. Phys. Lett. 88, 192103 (2006) CrossRef
Pfrommer, B.G., M.Cote, S.G. Louie, M.L. Cohen, J. Comput. Phys. 131, 133 (1997) CrossRef
Franciosi, A., Van del Walle, C.G., Surf. Sci. Rep. 25, 1 (1996) CrossRef
Segall, M.D., Philop J.D. Lindan, M.J. Probert, C.J. Pickard, P.J. Hasnip, S.J. Clark, M.C. Payne, J. Phys: Condens. Matter 14, 2717 (2002)
Al-Allak, H.M., Clark, S.J., Phys. Rev. B 63, 033311 (2001) CrossRef
Puthenkovilakam, R., Chang, J.P., Appl. Phys. Lett. 84, 1353 (2004) CrossRef
Ando, Y., Itoh, T., J. Appl. Phys. 61, 1497 (1987) CrossRef
B.A. Biegel, Quantum Electronic Device Simulation, Ph.D. dissertation, Stanford Univ., Stanford, CA, Mar. 1997
S.J. Lee, C.H. Lee, C H. Choi, D.L. Kwong, the 40th Annual Reliability Physics Symposium Proceedings (2002), p. 409
Chou, A.I., Lai, K., Kumar, K., Chowdhury, P., Jack C. Lee, Appl. Phys. Lett. 70, 3407 (1997) CrossRef