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A comprehensive study of beryllium diffusion in InGaAsusing different forms ofkick-out mechanism

Published online by Cambridge University Press:  15 October 1999

J. Marcon ,
S. Koumetz ,
K. Ketata ,
M. Ketata  and
J. G. Caputo
J. Marcon*
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
S. Koumetz
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
K. Ketata
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
M. Ketata
Affiliation:
Laboratoire Électronique, Microtechnologie et Instrumentation (UPRES EA 2654 du CNRS), LEMI-IUT-Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
J. G. Caputo
Affiliation:
Laboratoire de Mathématiques (UPRES A 6085 du CNRS), INSA de Rouen, B.P. 08, 76131 Mont-Saint-Aignan, France
*
[email protected] [email protected]
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Abstract

Be diffusion during post-growth annealing has been investigated in InGaAs epitaxiallayers. Kick-out mechanisms considering species charges, built-in electric field andFermi-level effect have been studied. Several forms of kick-out mechanism have beenimplemented in our simulation programs. Experimental concentration profiles obtainedby SIMS analysis have been compared systematically with the numerical results ofsimulations. We have deduced that the kick-out mechanism Bei 0 ↔ Bes − + IIII + is the dominating diffusion mechanism in InGaAsunder our experimental conditions (C 0 = 3 × 19 cm−3). With our experimentaldata, we have found that the effective diffusion coefficient values areD = (7.7−9) × 10−13 cm2 s−1 at T = 700 °C and D = (1.4−1.5) × 10−11 cm2 s−1 at T = 800 °C which is severalorders of magnitude higher than most published data. A possible explanation would bethe effect of V/III flux ratio.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 1 , October 1999 , pp. 7 - 18
Copyright
© EDP Sciences, 1999

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