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Characterization of SOI wafers by synchrotron X-ray topography

Published online by Cambridge University Press:  15 July 2004

T. Shimura ,
K. Fukuda ,
K. Yasutake  and
M. Umeno
T. Shimura*
Affiliation:
Department of Material & Life Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
K. Fukuda
Affiliation:
Department of Material & Life Science, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
K. Yasutake
Affiliation:
Department of Precision Science and Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
M. Umeno
Affiliation:
Department of Management Science, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8585, Japan
*
[email protected]
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Abstract

Synchrotron X-ray topographs were taken for bonded silicon-on-insulator wafers. Under the grazing incident condition, the topographs of the top Si layer and the substrate are similar, which represent the variation in incident angle due to surface undulation. Furthermore, a circular concentric pattern was observed in the topographs of the top Si layer both at the grazing and higher incident angles. This shows that the concentric pattern is not due to surface undulation, but due to lattice distortion.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 439 - 442
Copyright
© EDP Sciences, 2004

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