Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-25T18:09:25.502Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices

Published online by Cambridge University Press:  01 April 2014

Usman Younis ,
Barry M. Holmes  and
David C. Hutchings
Usman Younis*
Affiliation:
Department of Electrical Engineering, School of Electrical Engineering and Computer Science, National University of Sciences and Technology, H-12, 44000 Islamabad, Pakistan
Barry M. Holmes
Affiliation:
School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ, UK
David C. Hutchings
Affiliation:
School of Engineering, University of Glasgow, Oakfield Avenue, Glasgow, G12 8QQ, UK
*
ae-mail: [email protected]
Get access

Abstract

Processes to achieve high spatial resolution ion implantation induced quantum well intermixing in GaAs/AlGaAs superlattices have been developed. Ion implantation has been carried out using various doses of 4 MeV As2+ ion beam, followed by rapid thermal annealing at various temperatures for 60 s. Low temperature photoluminescence measurements reveal a blue-shift up to 90 nm in the energy band-gap. Propagation losses have been characterized in the intermixed waveguides, and losses as low as 0.55 cm−1 have been observed for 0.5 × 1013 cm−2 implantation dose which gives a blue-shift of 68 nm when annealed at 775 °C. The spatial resolution of ~1.2 μm has been observed at the depth of 2 μm inside the epitaxial structure.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 1 , April 2014 , 10101
Copyright
© EDP Sciences, 2014

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Marsh, J.H., Semicond. Sci. Technol. 8, 1136 (1993)CrossRef
Reithmaier, J.P., Forchel, A., IEEE J. Sel. Top. Quantum Electron. 4, 595 (1998)CrossRef
Deppe, D.G., Guido, L.J., Holonyak, N., Hsieh, K.C., Burnham, R.D., Thornton, R.L., Paoli, T.L., Appl. Phys. Lett. 49, 510 (1986)CrossRef
Ooi, B.-S., McIlvaney, K., Street, M.W., Helmy, A.S., Ayling, S.G., Bryce, A.C., Marsh, J.H., Roberts, J.S., IEEE J. Quantum Electron. 33, 1784 (1997)
Kowalski, O.P., Hamilton, C.J., McDougall, S.D., Marsh, J.H., Bryce, A.C., De la Rue, R.M., Vogele, B., Stanley, C.R., Button, C.C., Roberts, J.S., Appl. Phys. Lett. 72, 581 (1998)CrossRef
Charbonneau, S., Poole, P.J., Piva, P.G., Aers, G.C., Koteles, E.S., Fallahi, M., He, J.J., McCaffrey, J.P., Buchanan, M., Dion, M., Goldberg, R.D., Mitchell, I.V., J. Appl. Phys. 78, 3697 (1995)CrossRef
Leier, H., Forchel, A., Horcher, G., Hommel, J., Bayer, S., Rothfritz, H., Weimann, G., Schlapp, W., J. Appl. Phys. 67, 1805 (1990)CrossRef
Aimez, V., Beauvais, J., Beerens, J., Morris, D., Lim, H.S., Boon-Siew, O., IEEE J. Sel. Top. Quantum Electron. 8, 870 (2002)CrossRef
McLean, C.J., McKee, A., Lullo, G., Bryce, A.C., De La Rue, R.M., Marsh, J.H., Electron. Lett. 31, 1285 (1995)CrossRef
Ooi, B.-S., Teik Kooi, O., Gunawan, O., IEEE J. Quantum Electron. 40, 481 (2004)
Ooi, B.-S., Tang, Y.S., Helmy, A.S., Bryce, A.C., Marsh, J.H., Paquette, M., Beauvais, J., J. Appl. Phys. 83, 4526 (1998)CrossRef
Wagner, S.J., Holmes, B.M., Younis, U., Sigal, I., Helmy, A.S., Aitchison, J.S., Hutchings, D.C., IEEE J. Quantum Electron. 47, 834 (2011)CrossRef
Hutchings, D.C., Kleckner, T.C., J. Opt. Soc. Am. B: Opt. Phys. 19, 890 (2002)CrossRef
Wagner, S.J., Holmes, B.M., Younis, U., Helmy, A.S., Aitchison, J.S., Hutchings, D.C., Appl. Phys. Lett. 94, 151107 (2009)CrossRef
Younis, U., Holmes, B.M., Hutchings, D.C., Roberts, J.S., IEEE Photonics Technol. Lett. 22, 1358 (2010)CrossRef
Tittelbach, G., Richter, B., Karthe, W., Pure. Appl. Opt. 2, 683 (1993)CrossRef
Gontijo, I., Krauss, T., De La Rue, R.M., Roberts, J.S., Marsh, J.H., Electron. Lett. 30, 145 (1994)CrossRef
Ziegler, J.F., Biersack, J.P., Littmark, U., The Stopping and Ion Range of Ions in Matter (Pergamon, New York, 1985)CrossRefGoogle Scholar