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Cathodoluminescence study of widegap-semiconductor nanowires

Published online by Cambridge University Press:  15 July 2004

T. Sekiguchi ,
Q. Liu ,
T. Tanaka ,
J. Hu ,
Y. Zhu  and
Y. Bando
T. Sekiguchi*
Affiliation:
Nanomaterials Laboratory, National Institute for Materials Science Sengen 1-2-1, Tsukuba 305-0047, Japan
Q. Liu
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
T. Tanaka
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan
J. Hu
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan
Y. Zhu
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan
Y. Bando
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan
*
[email protected]
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Abstract

Two kinds of widegap-semiconductor nanowires, Tb-doped AlN nanowire arrays on Si and free-standing BN nanowires, were fabricated by different catalyst-free methods. Well-aligned Tb-doped AlN nanowire arrays were grown on the Si (111) substrate by magnetron sputtering method. Free-standing BN nanowires were grown by heat-treatment of B-N-O precursor and graphite powders. The crystal structure of nanowires was characterized by using X-ray diffraction and transmission electron microscopy. Cathodoluminescence (CL) observation was performed with a field emission scanning electron microscope operating with an electron beam lower than 5 kV. CL spectra mapping as well as monochromatic CL imaging clearly revealed not only the variation of the luminescence spectra of different nanowires but also that along the single wire. Our results demonstrates the advantage of CL for the characterization of nanowires.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 107 - 109
Copyright
© EDP Sciences, 2004

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References

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