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Annealing behaviour of boron implanted defects in Si detector:impact on breakdown performance

Published online by Cambridge University Press:  15 March 2002

S. Chatterji ,
A. Bhardwaj ,
K. Ranjan ,
Namrata ,
A. K. Srivastava  and
R. K. Shivpuri
S. Chatterji
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
A. Bhardwaj
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
K. Ranjan
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
Namrata
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
A. K. Srivastava
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
R. K. Shivpuri*
Affiliation:
Centre for Detector and Related Software Technology, Department of Physics, University of Delhi, Delhi-110007, India
*
[email protected]
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Abstract

Electrical properties of a device depend primarily on the active dopant concentration; understanding of the activation (annealing) process is crucial for the prediction of device behaviour. The present paper reports results from a computer based simulation approach to improve the breakdown performance of the device by studying the annealing behaviour of boron implanted in silicon. In order to have deep insight of the effect of defect complexes on the device performance, extended defect model has been incorporated in the simulation program. Optimization of annealing time, annealing temperature and dose has been performed, for the first time, incorporating a complete set of process induced defects like {113} defects, interface traps, dislocation loops and the optimization has been validated in terms of the breakdown performance of the device.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 17 , Issue 3 , March 2002 , pp. 223 - 232
Copyright
© EDP Sciences, 2002

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