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The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters

Published online by Cambridge University Press:  10 October 2012

A.F. Özdemir ,
T. Özsoy ,
Y. Kansız ,
M. Sancak ,
A. Kökce ,
N. Uçar  and
D.A. Aldemir
A.F. Özdemir*
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
T. Özsoy
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
Y. Kansız
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
M. Sancak
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
A. Kökce
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
N. Uçar
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
D.A. Aldemir
Affiliation:
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
*
ae-mail: [email protected]
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Abstract

The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 1 , October 2012 , 10101
Copyright
© EDP Sciences, 2012

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References

Sharma, B.L., Metal-Semiconductor Schottky Barrier Junctions and Their Applications (Plenum Press, New York, 1984)CrossRefGoogle Scholar
Osinsky, A., Gangopadhyay, S., Yang, J.W., Gaska, R., Kuksenkov, D., Temkin, H., Shmagin, I.K., Chang, Y.C., Muth, J.F., Kolbas, R.M., Appl. Phys. Lett. 72, 551 (1998)CrossRef
Asif Khan, M., Kuznia, J.N., Olson, D.T., Blasingame, M., Bhattarai, A.R., Appl. Phys. Lett. 63, 2455 (1993)CrossRef
Filonov, N.G., Instrum. Exp. Tech. 45, 412 (2002)CrossRef
Ruths, P.F., Ashok, S., Fonash, S.J., Ruths, J.M., IEEE T. Electron Dev. 28, 1003 (1981)CrossRef
Werner, J.H., Güttler, H.H., J. Appl. Phys. 73, 1315 (1993)CrossRef
Shan, W., Li, M.F., Yu, P.Y., Appl. Phys. Lett. 53, 974 (1988)CrossRef
van Schilfgaarde, M., Weber, E.R., Newman, N., Phys. Rev. Lett. 73, 581 (1994)CrossRef
Phatak, P., Newman, N., Dreszer, P., Weber, E.R., Phys. Rev. B 51, 18003 (1995)CrossRef
Çankaya, G., Uçar, N., Ayyildiz, E., Efeoğlu, H., Türüt, A., Tüzemen, S., Yoğurtçu, Y.K., Phys. Rev. B 60, 944 (1999)CrossRef
Çankaya, G., Uçar, N., Türüt, A., Phys. Stat. Sol. A 179, 469 (2000)3.0.CO;2-U>CrossRef
Gworek, C.S., Phatak, P., Jonker, B.T., Weber, E.R., Newman, N., Phys. Rev. B 64, 045322 (2001)CrossRef
Sönmezoğlu, S., Bayansal, F., Çankaya, G., Physica B 405, 287 (2010)CrossRef
Ziel, A.V., Solid State Physical Electronics, 2nd edn. (Prentice Hall, New Jersey, 1968), p. 245sGoogle Scholar
Hudait, K., Venkateswarlu, P., Krupanidhi, S.B., Solid-State Electron. 45, 133 (2001)CrossRef
Rhoderick, E.H., Williams, R.H., Metal-Semiconductor Contacts (Oxford University Press, Oxford, England, 1988)Google Scholar
Werner, J.H., Güttler, H.H., J. Appl. Phys. 69, 1522 (1991)CrossRef
Dobrescu, D., Rusu, A., Udrea, F., Dobrescu, L., Image Force Effect on Forward Characteristic of a Rectifier Metal-Semiconductor Contact (Semiconductor Conference, Sinai, Romania, 2001), pp. 429–432
Tung, R.T., Phys. Rev. B 45, 13509 (1992)CrossRef
Wagner, L.F., Young, R.W., Sugerman, A., IEEE Electr. Device L. EDL-4, 320 (1983)CrossRef
Van Meirghaeghe, R.L., Laflere, W.H., Cardon, F., J. Appl. Phys. 76, 403 (1994)CrossRef
Card, H.C., Rhoderick, E.H., J. Phys. D: Appl. Phys. 4, 1589 (1971)CrossRef
Pandey, S., Kal, S., Solid-State Electron. 42, 943 (1998)CrossRef
Horvath, Zs., J. Appl. Phys. 63, 976 (1971)CrossRef