Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-25T18:12:02.865Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis and modeling of the self-heating effect in SiGe HBTs

Published online by Cambridge University Press:  13 October 2003

H. Mnif ,
Th. Zimmer ,
J. L. Battaglia  and
S. Fregonese
H. Mnif*
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
Th. Zimmer
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
J. L. Battaglia
Affiliation:
LEPT – ENSAM, Esplanade des Arts et Métiers, 33405 Talence, France
S. Fregonese
Affiliation:
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
*
[email protected]
Get access

Abstract

This paper investigates the self-heating effect in SiGe heterojunction bipolar transistors. A physical study leads to a nonlinear physical model describing static and dynamic self-heating mechanism. The implementation of this model using an electrical equivalent circuit is presented. Our approach is validated using measurements on devices from different technologies. System configuration, measurement, and calibration issues are presented.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 25 , Issue 1 , January 2004 , pp. 11 - 23
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

R. Anholt, Artech House, (1995)
R.D. Lindsted, et al., IEEE Trans. Electron Devices ED-234, 1147 (1987)
Integrated Systems Engineering AG, Zurich, Switzerland, DESSIS-ISE release 7.0
Integrated Systems Engineering AG, Zurich, Switzerland, ISE TCAD RELEASE 7.0, Vol. 4a
M. Schröter, Hicum bipolar transistor model, available on the web: http://www.iee.et.tu-dresden.de/~schroter/Models/hicman.pdf
H.C. de Graaf, et al., Compact modeling for circuit design (Springer Verlag, Wien New York, 1990)
Mc Andrew, C., et al., IEEE J. Solid State Circuits 31, 1476 (1996) CrossRef
Samelis, A., et al., IEEE Trans. Microwave Theory Tech. 45, 534 (1997) CrossRef
M. März, et al., Thermal modeling of power-electronic systems, Application notes Infineon technologies AG, Munich
D.J. Walkey, et al., in Proceedings of the International Conference on BIPOLAR/BiCMOS Circuits and Technology Meeting, p. 97, MN, USA, 1999
D. Harame, et al., in Proceedings of the International Conference on IEDM Tech. Dig., 731, 1995
M. Feldmann, Théorie des réseaux et systèmes linéaires collection technique et scientifique des télécommunications, 2nd edn. (Eyrolles, Paris, 1986)
Trigeol, J.F., et al., Eur. Phys. J. Appl. Phys. 20, 105 (2002) CrossRef
Lagonotte, P., et al., Int. J. Thermal Sci. 1, 51 (1999) CrossRef
H. Tran, et al., in Proceedings of the International Conference on BIPOLAR/BiCMOS Circuits and Technology Meeting, p. 170, MN, USA, 1997
B. Martinet, et al., in Proceedings of the International Conference on BIPOLAR/BiCMOS Circuits and Technology Meeting, p. 147, MN, USA, 2002
Walkey, D.J., et al., Solid-State Electron. 44, 1373 (2000) CrossRef
M. Abramowitz, I. Stegun, Handbook of mathematical functions with formulas, graphs, and mathematical tables (Dover publications, INC., New York, 1970)
Walkey, D.J., et al., Solid-State Electron. 46, 7 (2002) CrossRef