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3D analysis of applied field effect on trapped magnetic field during pulsed field magnetization of bulk superconductor

Published online by Cambridge University Press:  21 April 2014

Mohamed Lotfi Khene ,
Lotfi Alloui ,
Souri Mohamed Mimoune ,
Frédéric Bouillault  and
Mouloud Feliachi
Mohamed Lotfi Khene
Affiliation:
Laboratoire de Modélisation des Systèmes Energétiques LMSE, Université de Biskra, BP 145, 07000 Biskra, Algeria
Lotfi Alloui*
Affiliation:
Laboratoire de Modélisation des Systèmes Energétiques LMSE, Université de Biskra, BP 145, 07000 Biskra, Algeria Laboratoire de Génie Electrique de Paris – LGEP, CNRS UMR 8507, Supélec, Université Pierre et Marie Curie-Paris 6; Université Paris Sud-Paris 11, Plateau de Moulon, 11 rue Joliot Curie, 91192 Gif-sur-Yvette, Cedex, France
Souri Mohamed Mimoune
Affiliation:
Laboratoire de Modélisation des Systèmes Energétiques LMSE, Université de Biskra, BP 145, 07000 Biskra, Algeria
Frédéric Bouillault
Affiliation:
Laboratoire de Génie Electrique de Paris – LGEP, CNRS UMR 8507, Supélec, Université Pierre et Marie Curie-Paris 6; Université Paris Sud-Paris 11, Plateau de Moulon, 11 rue Joliot Curie, 91192 Gif-sur-Yvette, Cedex, France
Mouloud Feliachi
Affiliation:
Institut de Recherche en Electrotechnique et Electronique de Nantes Atlantique IREENA, CRTT, Boulevard de l’Université, BP 406, 44602 Saint-Nazaire Cedex, France
*
ae-mail: [email protected]
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Abstract

External applied field effect in magnetization process by pulsed field (PFM) method of rectangular bulk superconductor is analysed by solving the A-V magnetic equation coupled to the thermal one in order to show the influence of the amplitude of the external field on the trapped magnetic field of bulk superconductor. A numerical model based on the control volume method (CVM) has been developed, which uses a power-law model with temperature dependency and magnetic field dependence on critical current density. For low cooling temperature Tco = 20 K, a good distribution of the trapped magnetic field of the bulk superconductor is obtained when we applied high external field.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 1 , April 2014 , 10601
Copyright
© EDP Sciences, 2014

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