Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-04T19:58:16.734Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray powder diffraction data for bulk Zn1−xMgxSe crystals

Published online by Cambridge University Press:  10 January 2013

W. Paszkowicz  and
J. Szatkowski
W. Paszkowicz*
Affiliation:
Institute of Physics, Polish Academy of Sciences, al.Lotników 32/46, 02-668 Warsaw, Poland
J. Szatkowski
Affiliation:
Institute of Physics, N. Copernicus University, ul.Grudziadzka 5/7, 87-100 Toruń, Poland
*
a) Electronic mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

The X-ray powder diffraction patterns for three bulk Zn1−xMgxSe crystals are reported. The data were obtained with the help of an automated Bragg–Brentano diffractometer using Ni-filtered Cu Kα radiation. One of the samples is of the sphalerite structure type, and it has the magnesium content slightly below the sphalerite–wurtzite phase transition. The two remaining ones are of the wurtzite type with low and high magnesium content. The lattice constant for the sphalerite Zn0.86Mg0.14Se is a0=5.7011(1) Å. For the wurtzite alloys the lattice constants are a0=4.0540(1) Å, c0=6.6270(2) Å (for Zn0.72Mg0.28Se), a0=4.1195(1) Å, c0=6.6941(2) Å (for Zn0.37Mg0.63Se).

Keywords

bulk Zn1−xMgxpowder diffraction data
Type
Research Article
Information
Powder Diffraction , Volume 13 , Issue 1 , March 1998 , pp. 50 - 55
Copyright
Copyright © Cambridge University Press 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Ferreira, S. O., Sitter, H., Faschinger, W., Krump, R., and Brunthaler, G. (1995). “Type I-Type II Band Offset Transition of the ZnMgSe-ZnTe System,” J. Cryst. Growth, 146, 418–421.CrossRefGoogle Scholar
Fewster, P. F., and Andrew, N. L. (1995). “Absolute Lattice Parameter Measurement,” J. Appl. Crystallogr., 28, 451–458.CrossRefGoogle Scholar
Firszt, F. (1993). “Luminescence Properties of Mg xZn 1−xSe Crystals,” Semicond. Sci. Technol., 8, 712–717.Google Scholar
Firszt, F., Meczyńska, H., Sekulska, B., Szatkowski, J., Paszkowicz, W., and Kachniarz, J. (1995). “Composition Dependence of the Unit-Cell Dimensions and the Energy Gap in Zn xMg 1−xSe Crystals,” Semicond. Sci. Technol., 10, 197–200.Google Scholar
Firszt, F., Łeęgowski, S., Meęczyńska, H., Oczkowski, H. L., Osińska, W., Szatkowski, J., Paszkowicz, W., and Spolnik, Z. (1996). “Luminescence of Zn 1−xMg xSe, Zn 1−xMg xSe:Al and Zn 1−xMg xSe:I Mixed Crystals Grown by Bridgman Method,” J. Cryst. Growth, 159, 167–170.CrossRefGoogle Scholar
Firszt, F., Meęczyńska, H., Łeęgowski, S., Szatkowski, J., Falke, U., Hietschold, M., Paszkowicz, W., and Dłuzewski, P. (1997). “Growth and Characterization of Zn 1−xMg xSe Mixed Crystals,” Proceedings of the XII SPIE Conference on Solid State Crystals: Growth and Characterization, 7–11 October 1996, Zakopane, Poland, edited by J. Zmija, A. Majchrowski, J. Rutkowski, and J. Zieliński, SPIE Proceedings Series Vol. 3178, SPIE, Washington, 1997, pp. 205–212.Google Scholar
Griebl, E., Haserer, B., Frey, T., Reisinger, T., and Gebhardt, W. (1996).“Zn 1−xMg xSe Samples and a ZnSe/Zn 0.93Mg 0.07Se Quantum Well under Pressure: Optical Absorption and Photoluminescence,” Phys. Status Solidi B, 198, 355–361.CrossRefGoogle Scholar
Jobst, B., Hommel, D., Lunz, U., Gerhard, T., and Landwehr, G. (1996).“E 0 Band-Gap Energy and Lattice Constant of Ternary Zn 1−xMg xSe as Functions of Composition,” Appl. Phys. Lett., 69, 97–99.CrossRefGoogle Scholar
Litz, M. Th., Watanabe, K., Korn, M., Ress, H., Lunz, U., Ossau, W., Waag, A., Landwehr, G., Walther, Th., Neubauer, B., Gerthsen, D., and Schlüsser, U. (1996). “Epitaxy of Zn 1−xMg xSe yTe 1−y on (100) InAs,” J. Cryst. Growth, 159, 54–57.CrossRefGoogle Scholar
Lozykowski, H. J., Holtz, P. O., and Monemar, B. (1983). “Luminescence Properties of Mg xZn 1−xSe Prepared by Thermal Diffusion,” J. Electron. Mater. 12, 653–665.CrossRefGoogle Scholar
Okuyama, H., Nakano, K., Miyajima, T., and Akimoto, K. (1991). “Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy,” Jpn. J. Appl. Phys., Part 1, 30,L1620–L1623.Google Scholar
Paszkowicz, W., Spolnik, Z., Firszt, F., and Meęczyńska, H. (1997). “Powder Diffraction Study of Zn 1−xMg xSe alloys,” Adv. X-Ray Analysis (in press).Google Scholar
Smith, G. S., and Snyder, R. L. (1979). “F N: A Criteria for Pattern Evaluation,” J. Appl. Crystallogr., 12, 60–64.CrossRefGoogle Scholar
Szatkowski, J., Firszt, F., Meęczyńska, H., and Łeęgowski, S. (1993). “Electrical and Optical Properties of ZnSe:Mg Crystals,” Acta Phys. Polon. A 84, 531–534.CrossRefGoogle Scholar
Yoder-Short, D. R., Debska, U., and Furdyna, J. K. (1985). “Lattice Parameters of Zn 1−xMn xSe and Tetrahedral Bond Lengths in A 1−xIIMn xB VI Alloys,” J. Appl. Phys., 58, 4056–4060.CrossRefGoogle Scholar