Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-23T19:34:20.407Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray diffraction imaging of dislocation generation related to microcracks in Si wafers

Published online by Cambridge University Press:  29 February 2012

J. Wittge ,
A. Danilewsky ,
D. Allen ,
P. McNally ,
Z. J. Li ,
T. Baumbach ,
E. Gorostegui-Colinas ,
J. Garagorri ,
M. R. Elizalde  and
D. Jacques
...Show all authors
J. Wittge
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
A. Danilewsky
Affiliation:
Kristallographie, Geowiss. Institut, University Freiburg, Freiburg, Germany
D. Allen
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
P. McNally
Affiliation:
Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland
Z. J. Li
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
T. Baumbach
Affiliation:
Research Centre Karlsruhe, Institut für Synchrotronstrahlung, Karlsruhe, Germany
E. Gorostegui-Colinas
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
J. Garagorri
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
M. R. Elizalde
Affiliation:
Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa, San Sebastian, Spain
D. Jacques
Affiliation:
Jordan Valley Semiconductor (UK), Durham DH1 1TW, United Kingdom
M. C. Fossati
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
D. K. Bowen
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
B. K. Tanner*
Affiliation:
Department of Physics, Durham University, South Road, Durham DH1 3LE, United Kingdom
*
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

The nucleation of dislocations at indents in silicon following rapid thermal annealing (RTA) has been examined by X-ray diffraction imaging (topography). For indentation loads below 200 mN, no slip bands were generated from the indent sites following RTA at 1000 °C under spike conditions. Upon plateau annealing at 1000 °C, slip dislocations were propagated from some indents but not all. Slip was also observed from edge defects not associated with indentation. For 500-mN indentation load, large scale dislocation sources were generated from the indent sites propagating on two of the four {111} slip planes. These dislocations multiplied into macroscopic-scale slip bands. A significant change in morphology was observed in the 60° dislocation segments after the screw segment reached the rear surface of the wafer. Dislocations changed line direction and in some cases appeared to leave the Peierls trough during glide.

Keywords

X-ray diffraction imagingtopographydislocation source
Type
Technical Articles
Information
Powder Diffraction , Volume 25 , Issue 2 , June 2010 , pp. 99 - 103
Copyright
Copyright © Cambridge University Press 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Allen, D., Wittge, J., Zlotos, A., Gorostegui-Colinas, E., Garagorri, J., Mcnally, P. J., Danilewsky, A. N., and Elizalder, M. R. (2010). “Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 268, 383–387.10.1016/j.nimb.2009.10.174CrossRefGoogle Scholar
Bowen, D. K. and Tanner, B. K. (1998). High-Resolution X-ray Diffraction and Topography (Taylor and Francis, London).Google Scholar
Bowen, D. K. and Tanner, B. K. (2006). X-ray Metrology in Semiconductor Manufacturing (CRC/Taylor and Francis, Boca Raton/London).10.1201/9781420005653Google Scholar
Bowen, D. K., Wormington, M., and Feichtinger, P. (2003). “A novel digital X-ray topography system,” J. Phys. D JPAPBE 36, A17–23.10.1088/0022-3727/36/10A/305CrossRefGoogle Scholar
Brun, X. F. and Melkote, S. N. (2006). “Evaluation of handling stresses applied to EFG silicon wafer using a Bernoulli gripper,” Conference Record of 2006 IEEE Fourth World Conference on Photovoltaic Energy Conversion, pp. 1346–1349.CrossRefGoogle Scholar
Brun, X. F. and Melkote, S. N. (2009). “Analysis of stresses and breakage of crystalline silicon wafers during handling and transport,” Sol. Energy Mater. Sol. Cells SEMCEQ 93, 1238–1247.10.1016/j.solmat.2009.01.016Google Scholar
Chen, P. Y., Chen, S. L., Tsai, M. H., Jing, M. H., and Lin, T. C. (2007). “Investigation of wafer strength in 12 inch bare wafer for preventing wafer breakage,” IEEE International Conference on Electron Devices and Solid-State Circuits, pp. 545–548.Google Scholar
Cook, R. F. (2006). “Strength and sharp contact fracture of silicon,” J. Mater. Sci. JMTSAS 41, 841–872.10.1007/s10853-006-6567-yGoogle Scholar
Danilewsky, A., Wittge, J., Hess, A., Cröll, A., Allen, D., McNally, P., Vagoviče, P., Cecilia, A., Li, Z., Baumbach, T., Gorostegui-Colinas, E., and Elizalde, M. R. (2010). “Dislocation generation related to microcracks in Si-wafers: High temperature in situ study with white beam X-ray topography,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 268, 399–402.10.1016/j.nimb.2009.09.013Google Scholar
Danilewsky, A. N., Simon, R., Fauler, A., Fiederle, M., and Benz, K. W. (2003). “White beam X-ray topography at the synchrotron light source ANKA, Research Centre Karlsruhe,” Nucl. Instrum. Methods Phys. Res. B NIMBEU 199, 71–74.10.1016/S0168-583X(02)01401-5Google Scholar
Dash, W. C. (1956). “Copper precipitation on dislocations in silicon,” J. Appl. Phys. JAPIAU 27, 1193–1195.10.1063/1.1722229Google Scholar
Tanner, B. K., Midgley, D., and Safa, M., (1977). “Dislocation contrast in X-ray synchrotron topographs,” J. Appl. Crystallogr. JACGAR 10, 281–286.10.1107/S0021889877013491Google Scholar
Rupnowski, P. and Spoori, B. (2009). “Strength of silicon wafers: Fracture mechanics approach,” Int. J. Fract. IJFRAP 155, 67–74.10.1007/s10704-009-9324-9Google Scholar