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X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

Published online by Cambridge University Press:  29 February 2012

T. N. Blanton ,
C. L. Barnes ,
M. Holland ,
K. B. Kahen ,
S. K. Gupta  and
F. Bai
T. N. Blanton*
Affiliation:
Eastman Kodak Company, Rochester, New York 14650-2106
C. L. Barnes
Affiliation:
Eastman Kodak Company, Rochester, New York 14650-2106
M. Holland
Affiliation:
Eastman Kodak Company, Rochester, New York 14650-2106
K. B. Kahen
Affiliation:
Eastman Kodak Company, Rochester, New York 14650-2106
S. K. Gupta
Affiliation:
Rochester Institute of Technology, Rochester, New York 14623-2106
F. Bai
Affiliation:
Rochester Institute of Technology, Rochester, New York 14623-2106
*
a)Author to whom correspondence should be addressed. Electronic mail: [email protected]
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Abstract

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pin-diode LED applications. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500 to 600 arc sec. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a four-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc sec are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

Keywords

epitaxyGaAsgallium arsenideX-ray diffractionzinc selenideZnSe
Type
X-Ray Diffraction
Information
Powder Diffraction , Volume 24 , Special Issue 2 , June 2009 , pp. 78 - 81
Copyright
Copyright © Cambridge University Press 2009

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References

Alexe, G., Heinke, H., Haase, L., Hommel, D., Schreiber, J., Albrecht, M., and Strunk, H. P. (2005). “Nondestructive evaluation of misfit dislocation densities in ZnSe/GaAs heterostructures by x-ray diffuse scattering,” J. Appl. Phys.JAPIAU 97, 103506.1–103506.6.10.1063/1.1896438CrossRefGoogle Scholar
Benkert, A., Schumaker, C., Brunner, K., and Neder, R. B. (2007). “Monitoring of ZnCdSe layer properties by in situ x-ray diffraction during heteroepitaxy on (001)GaAs substrates,” Appl. Phys. Lett.APPLAB 90, 162105.1–162105.3.10.1063/1.2724892CrossRefGoogle Scholar
Blieske, U., Kampschulte, T., Bauknecht, A., Saad, M., Sollner, J., Krost, A., Schatke, K., and Kux-Steiner, M. C. (1997). “n-ZnSe/p-GaAs heterojunction solar cells,” IEEE-Proceedings Photovoltaic Society Conference, pp. 939–942.CrossRefGoogle Scholar
Cullity, B. D. (1978). Elements of X-ray Diffraction (Addison-Wesley, Reading, MA), p. 102.Google Scholar
Funato, M., Ishii, M., Murwala, P. A., Tsuji, O., Fujita, S., and Fujita, S. (1992). “Metalorganic vapor phase epitaxial growth and characterization of ZnSe-GaAs multilayered structures,” J. Cryst. GrowthJCRGAE 117, 543–548.10.1016/0022-0248(92)90810-6CrossRefGoogle Scholar
Hizem, N., Kalboussi, A., Adhiri, R., and Souifi, A. (2007). “Blue/green luminescence based on Zn(S)Se/GaAs heterostructures,” Microelectron. J.MICEB9 38, 496–500.10.1016/j.mejo.2007.03.009CrossRefGoogle Scholar
ICDD (2007). “Powder Diffraction File,” International Centre for Diffraction Data, edited by Kabekkodu, S., Newtown Square, PA.Google Scholar