Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T05:55:35.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis and characterization of high purity, single phase GaN powder

Published online by Cambridge University Press:  10 January 2013

Cengiz M. Balkas ,
Cem Basceri  and
Robert F. Davis
Cengiz M. Balkas
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
Cem Basceri
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
Robert F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering Raleigh, North Carolina 27695-7907
Get access Rights & Permissions [Opens in a new window]

Abstract

Synthesis of high-purity, single-phase gallium nitride (GaN) powder has been achieved by reacting molten Ga with flowing ammonia (NH3) in a hot wall tube furnace. The optimum temperature, NH3 flow rate, and position of the boat in the hot wall tube furnace relative to the NH3 inlet for the complete reaction to pure GaN for our system were 975 °C, 400 standard cubic centimeters per minute (seem) and 50 cm, respectively. The X-ray diffraction (XRD) data revealed the GaN to be single phase with a = 3.1891 Å, c = 5.1855 Å, in space group P63mc, Z=2 and Dx =6.089 g cm−3. Scanning electron microscopy revealed a particle size distribution in the crushed material between 1 and 5 μm with most of the particles being ≍1 μm.

Keywords

gallium nitridesynthesispowderX-ray diffractionscanning electron microscopy
Type
Research Article
Information
Powder Diffraction , Volume 10 , Issue 4 , December 1995 , pp. 266 - 268
Copyright
Copyright © Cambridge University Press 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Appleman, D. E., and Evans, H. T. (1973). U.S. Geological Survey, Computer Contribution 20, U.S. National Technical Information Service, Document No. PB-216188.Google Scholar
Balkas, C. M., and Davis, (1994). R. F. North Carolina State University, Invention Disclosure No: 95-06, Raleigh, North Carolina, (1994).Google Scholar
Juza, H. (1938). “Uber die Kristallstrukturen von Cu3N, GaN, InN Metallamide und Metallnitride,” Z. Anorg. Chem. 239, 285.Google Scholar
Pichugin, I. G., and Yaskov, D. A. (1972). “Preparation of Gallium Nitride,” Inorg. Mat., 6, 1732.Google Scholar
Smith, G. S., and Snyder, R. J. (1979). J. Appl. Cryst. 12, 60.CrossRefGoogle Scholar
Werner, P. E. (1984). Trial and Error Program for Indexing of Unknown Powder Patterns, TREOR, University of Stockholm, Stockholm, Sweden.Google Scholar