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Positional ordering in the light RE–Ga systems (RE=rare earth element)

Published online by Cambridge University Press:  10 January 2013

D. Gur
Affiliation:
Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
G. Kimmel
Affiliation:
Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel

Abstract

Crystal data and results of structure refinement, using powder X-ray diffraction and Rietveld analysis, for ε-ordered structures near 75 at. % Ga are reported. The structures are based on the AlB2-type with deviation from stoichiometry due to pairwise substitution of rare earth (RE) atoms by gallium. Weak reflections which are forbidden in the AlB2-type structure were observed and indicate the existence of positional ordering of Ga2 pairs located in the basal planes preserving the hexagonal symmetry (S.G. P6/mmm). This ordering results in a new unit cell with parameters a, c, in which a=a√3 and c=c. The experimental data of the cells parameters are: a=7.467(2)Å, c=4.276(3)Å for Nd1−xGa2−x (x=0.18), and a=7.400(3)Å, c=4.184(2)Å for Gd1−xGa2+2x (x=0.165).

Type
Research Article
Copyright
Copyright © Cambridge University Press 1999

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