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Debye temperature of 4H-SiC determined by X-ray powder diffraction

Published online by Cambridge University Press:  29 February 2012

T. H. Peng
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
Y. F. Lou
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
S. F. Jin
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
W. Y. Wang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
W. J. Wang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
G. Wang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
X. L. Chen*
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China
*
a)Author to whom the correspondence should be addressed. Electronic mail: [email protected]

Abstract

Crystal structure of 4H-SiC was refined from room-temperature X-ray powder diffraction data using the Rietveld refinement method. The refined lattice constants were determined to be a=b=3.079 93(0) Å, c=10.082 22(2) Å, and the refined overall temperature factor B=0.383(3) Å2. Using the Debye approximation, the Debye temperature was successfully determined to be 1194.8 K.

Type
Technical Articles
Copyright
Copyright © Cambridge University Press 2009

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