Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T08:38:08.300Z Has data issue: false hasContentIssue false

D041 High Resolution X-ray Diffraction Studies of Epitaxially Grown GaN/SiC(0001) - Growth Conditions, Defect Density and Stress

Published online by Cambridge University Press:  20 May 2016

N. Faleev
Affiliation:
Texas Tech University, Lubbock, TX
H. Temkin
Affiliation:
Texas Tech University, Lubbock, TX
I. Ahmad
Affiliation:
Texas Tech University, Lubbock, TX
M. Holtz
Affiliation:
Texas Tech University, Lubbock, TX
Yu. Melnik
Affiliation:
TDI, Inc., Gaithersburg, MD

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Denver X-Ray Conference
Copyright
Copyright © Cambridge University Press 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)