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An X-ray diffraction study of Tm-doped BaYYbF8 thin films

Published online by Cambridge University Press:  10 January 2013

T. N. Blanton  and
L. S. Hung
T. N. Blanton*
Affiliation:
Analytical Technology Division, Eastman Kodak Company, Rochester, New York 14652-3712
L. S. Hung
Affiliation:
Electronic Systems Division, Eastman Kodak Company, Rochester, New York 14650-02011
*
a)E-mail: [email protected]
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Abstract

Thulium (Tm) doped barium yttrium ytterbium fluoride (BaYYbF8:Tm) thin films have been deposited on (100) silicon (Si) or (100) and (111) gallium arsenide (GaAs) substrates. When deposited on (100) Si, with an intermediate amorphous silicon dioxide (SiO2) layer, the BaYYbF8:Tm film was found to be polycrystalline, crystallizing in a previously unobserved cubic phase with a lattice constant a = 11.4208 (9) Å . Films deposited on GaAs, with an intermediate calcium fluoride (CaF2) layer, showed a high degree of planar orientation. Pole figure analysis revealed that the BaYYbF8:Tm films deposited on CaF2/GaAs are in-plane aligned dependent upon the substrate orientation.

Type
Research Article
Information
Powder Diffraction , Volume 11 , Issue 3 , September 1996 , pp. 204 - 208
Copyright
Copyright © Cambridge University Press 1996

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