Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T06:25:50.306Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray powder diffraction analysis and initial Rietveld characterization of SmAlSi and SmAlGe

Published online by Cambridge University Press:  05 March 2012

S. Pikus ,
E. Olszewska ,
I. Mel’nyk  and
R. E. Gladyshevskii
S. Pikus*
Affiliation:
Department of Crystallography, Faculty of Chemistry, Maria Curie Sklodowska University, Maria Curie-Sklodowska Sqr. 3, 20-031 Lublin, Poland
E. Olszewska
Affiliation:
Department of Crystallography, Faculty of Chemistry, Maria Curie Sklodowska University, Maria Curie-Sklodowska Sqr. 3, 20-031 Lublin, Poland
I. Mel’nyk
Affiliation:
Department of Crystallography, Faculty of Chemistry, Maria Curie Sklodowska University, Maria Curie-Sklodowska Sqr. 3, 20-031 Lublin, Poland
R. E. Gladyshevskii
Affiliation:
Department of Inorganic Chemistry, Ivan Franko National University of Lviv, vul. Kyryl I Mefodiya 6, UA-79005 Lviv, Ukraine
*
a)Electronic mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

The structures of SmAlSi and SmAlGe were determined by the powder diffraction method. These compounds have a tetragonal structure of LaPtSi type, which is a ternary substitutional variant of α-ThSi2. Both prototype structures have the same extinction rules, and as a result, the choice of the structural type must be based on very careful examination of the peak intensities. This was done with the aid of a Rietveld refinement, which indicates a better fit of the LaPtSi structure.

Type
Technical Articles
Information
Powder Diffraction , Volume 19 , Issue 4 , December 2004 , pp. 359 - 361
Copyright
Copyright © Cambridge University Press 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

de Wolff, P. M. (1968). “A simplified criterion for the reliability of a powder pattern indexing,” J. Appl. Crystallogr. JACGAR 1, 108–113.CrossRefGoogle Scholar
Kleep, K. and Parthé, E. (1982). “R PtSi phases (R=La, Ce, Pr, Nd, Sm and Gd) with ordered ThSi2 derivative structure,” Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. ACBCAR 38, 1105–1108.CrossRefGoogle Scholar
Lutsyshyn, Yu., Mel’nyk, I., Yanson, T., and Gladyshevskii, R. (2001). “Crystal structure and homogeneity range of RAlxGe2−x (R=La, Ce, Pr, Nd, Sm),” XV Ukr. Conf. Inorg. Chem., Coll. Abst., p. 56.Google Scholar
Mel’nyk, I., Kuprysyuk, V., Gladyshevskii, R., and Pikus, S. (2002). “Crystal structures of the compounds Sm2AlGe3 and Tb2AlGe3,” VIII Inter. Conf. Cryst. Chem. Intermet. Comp., Coll. Abst., p. 97.Google Scholar
Mel’nyk, I., Lyaskovka, N., Romaniv, O., Lutsyshyn, Yu., Semus’o, N., Gladyshevskii, R., Gladyshevskii, E., Pikus, S., and Staszczuk, P. (2003). “Isothermal sections of Sm-Al-{Si,Ge} (0–40 at. % Sm) phase diagrams,” XLVI Meet. Pol. Chem. Soc., Coll. Abst., Vol. 2, p. 690.Google Scholar
Mel’nyk, I., Pikus, S., Semus’o, N., and Gladyshevskii, R. (2004). “Phase diagrams of the Ln-Al-{Si,Ge} Systems,” Archiwum nauki o materiałach , 25, 113–131.Google Scholar
Smith, G. S. and Snyder, R. L. (1979). “F N: Criterion for rating power diffraction patterns and evaluating the reliability of powder-pattern indexing,” J. Appl. Crystallogr. JACGAR 12, 60–65.CrossRefGoogle Scholar
Young, R. A., Larson, A. C., and Paiva_Santos, C. O. (1998). “Program DBWS-9807 for Rietveld analysis of X-ray and neutron powder diffraction patterns,” School of Physics, Georgia Institute of Technology, Atlanta, GA.Google Scholar
Werner, P. E. (1984). “TREOR, trial and error program for indexing of unknown powder patterns,” University of Stockholm, S 106 91, Stockholm, Sweden.Google Scholar
Zhao, J. T. and Parthé, E. (1991a). “La2Al3Ge4 and isotypes of the orthorhombic Ba2Cd 3Bi 4 type, a slab-stacking variant of the HfFe 2Si2 type,” Acta Crystallogr., Sect. C: Cryst. Struct. Commun. ACSCEE 47, 1781–1784.CrossRefGoogle Scholar
Zhao, J. T., Cenzual, K., and Parthé, E. (1991b). “Monoclinic La2AlGe6 and isotypes, a vacancy variant of the orthorhombic SmNiGe 3 type,” Acta Crystallogr., Sect. C: Cryst. Struct. Commun. ACSCEE 47, 1777–1781.CrossRefGoogle Scholar
Zhao, J. T. (1997). “Al-Ge covalent bonded networks in SmAlGe structure,” Xiamen Daxue Xuebao, Ziran Kexueban. 36, 565–569.Google Scholar