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Ultraviolet emission from high-quality crystalline ultra-long AlN whiskers

Published online by Cambridge University Press:  04 September 2013

Sibin Zuo ,
Haiyun Zhang ,
Jun Wang  and
Wenjun Wang
Sibin Zuo
Affiliation:
Research Center for Applied Finance, School of Banking and Finance, University of International Business and Economics, Beijing 100029, China
Haiyun Zhang
Affiliation:
Research Center for Applied Finance, School of Banking and Finance, University of International Business and Economics, Beijing 100029, China
Jun Wang
Affiliation:
Research and Development Center of Functional Crystal, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
Wenjun Wang*
Affiliation:
Research and Development Center of Functional Crystal, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
*
a) Author to whom correspondence should be addressed. Electronic mail: [email protected]
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Abstract

We report here the fabrication and characterization of ultra-long AlN whiskers by physical vapor transport method. The obtained whiskers are 1–3 µm in diameter and up to millimeters in length. The whiskers grow along the [0001] crystallographic direction and are well crystallized. They exhibit a strong ultraviolet emission at 345 nm, the shortest wavelength reported in AlN whiskers or nanowires. Our results indicate that these large scales of AlN whiskers are less contaminated by oxygen and other impurities compared with the previously reported ones, which may find wide applications in fabricating ultraviolet optoelectronic devices.

Keywords

AlNwhiskersphysical vapor transportVS mechanism
Type
Technical Articles
Information
Powder Diffraction , Volume 29 , Issue 1 , March 2014 , pp. 3 - 7
Copyright
Copyright © International Centre for Diffraction Data 2013 

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References

Bao, H. Q., Chen, X. L., Li, H., Wang, G., Song, B., and Wang, W. J. (2009). “The sublimation growth of AlN fibers: transformations in morphology and fiber direction,” Appl. Phys. A 94, 173.CrossRefGoogle Scholar
Bergman, L., Alexson, D., Murphy, P. L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Balkas, C., Shin, H., and Davis, R. F. (1999). “Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure,” Phys. Rev. B 59, 12977.CrossRefGoogle Scholar
Berzina, B., Trinkler, L., Sils, J., and Atobe, K. (2002). Radiat. Eff. Defects Solids 157, 1089.CrossRefGoogle Scholar
Byeun, Y. K., Telle, R., Jung, S. H., Choi, S. C., and Hwang, H. I. (2010). “The growth of one-dimensional single-crystalline AlN nanostructures by HVPE and their field emission properties,” Chem. Vap. Deposition 16, 72.CrossRefGoogle Scholar
Cao, Y. G., Chen, X. L., Lan, Y. C., Li, J. Y., Xu, Y. P., Xu, T., Liu, Q. L., and Liang, J. K. (2000). “Blue emission and Raman scattering spectrum from AlN nanocrystalline powders,” J. Cryst. Growth 213, 198.CrossRefGoogle Scholar
Davydov, V. Y., Kitaev, Y. E., Goncharuk, I. N., Smirnov, A. N., Graul, J., Semchinova, O., Uffmann, D., Smirnov, M. B., and Mirgorodsky, A. P. (1998). “Phonon dispersion and Raman scattering in hexagonal GaN and AlN,” Phys. Rev. B 58, 12899.CrossRefGoogle Scholar
Han, S., Jin, W., Zhang, D., Tang, T., Li, C., Liu, X. L., Liu, Z. Q., Lei, B., and Zhou, C. W. (2004). “Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination,” Chem. Phys. Lett. 389, 176.CrossRefGoogle Scholar
Harima, H. (2002). “Properties of GaN and related compounds studied by means of Raman scattering,” J. Phys. Condens. Matter 14, R967.CrossRefGoogle Scholar
Hayes, J. M., Kuball, M., Shi, Y., and Edgar, J. H. (2000). “Temperature dependence of the phonons of Bulk AlN,” Jpn. J. Appl. Phys. 39, L710.CrossRefGoogle Scholar
Jiang, L. B., Zuo, S. B., Wang, W. J., Li, H., Jin, S. F., Wang, S. C., and Chen, X. L. (2011). “Role of Ni in the controlled growth of single crystal AlN triangular microfibers: morphology evolvement, growth kinetics and photoluminescence,” J. Cryst. Growth 318, 1089.CrossRefGoogle Scholar
Jung, W. S. and Joo, H. U. (2005). “Catalytic growth of aluminum nitride whiskers by a modified carbothermal reduction and nitridation method,” J. Cryst. Growth 285, 566.CrossRefGoogle Scholar
Lan, Y. C., Chen, X. L., Cao, Y. G., Xu, Y. P., Xun, L. D., Xu, T., and Liang, J. K. (1999). “Low-temperature synthesis and photoluminescence of AlN,” J. Cryst. Growth 207, 247.CrossRefGoogle Scholar
Lei, M., Yang, H., Guo, Y. F., Song, B., Li, P. G., and Tang, W. H. (2007). “Synthesis and optical property of high purity AlN nanowires,” Mater. Sci. Eng. B 143, 85.CrossRefGoogle Scholar
Li, J. J., Song, B., Wu, R., Li, J., and Jian, J. K. (2012). “Preparation and optical properties of free-standing transparent aluminum nitride film assembled by aligned nanorods,” J. Am. Ceram. Soc. 95, 870.CrossRefGoogle Scholar
Liu, B. D., Bando, Y., Wu, A. M., Jiang, X., Dierre, B., Sekiguchi, T., Tang, C. C., Mitome, M., and Golberg, D. (2010). “352 nm ultraviolet emission from high-quality crystalline AlN whiskers,” Nanotechnology 21, 1.Google ScholarPubMed
Liu, F., Su, Z. J., Mo, F. Y., Li, L., Chen, Z. S., Liu, Q. R., Chen, J., Deng, S. Z., and Xu, N. S. (2011). “Controlled synthesis of ultra-long AlN nanowires in different densities and in situ investigation of the physical properties of an individual AlN nanowireNanoscale,” Nanoscale 3, 610.CrossRefGoogle Scholar
Monemar, B. (1999). “III–V nitrides—important future electronic materials,” J. Mater. Sci. Mater. Electron. 10, 227.CrossRefGoogle Scholar
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M. (1994). “Largebandgap SiC, IIIV nitride, and IIVI ZnSebased semiconductor device technologies,” J. Appl. Phys. Lett. 76, 1363.Google Scholar
Rosenberger, L., Baird, R., Cullen, E. M., Auner, G., and Shreve, G. (2008). “XPS analysis of aluminum nitride filmsdeposited by plasma sourcemolecular beam Epitaxy,” Surf. Interface Anal. 40, 1254.CrossRefGoogle Scholar
Schulz, T., Albrecht, M., Irmscher, K., Hartmann, C., Wollweber, J., and Fornari, R. (2011). “Ultraviolet luminescence in AlN,” Phys. Status Solidi b 248, 1513.CrossRefGoogle Scholar
Slack, G. A. (1973). “Nonmetallic crystals with high thermal conductivity,” J. Phys. Chem. Solids 34, 321.CrossRefGoogle Scholar
Tang, Y. B., Cong, H. T., and Cheng, H. M. (2007). “Synthesis and properties of one-dimensional aluminum nitride nanostructures,” Nano 2, 307.CrossRefGoogle Scholar
Tang, C. C., Fan, S. S., Chapelle, M. L., and Li, P. (2001). “Silica-assisted catalytic growth of oxide and nitride nanowires,” Chem. Phys. Lett. 333, 12.CrossRefGoogle Scholar
Wu, H. M. and Liang, J. Y. (2009). “Synthesis and luminescence properties of AlN nanowires,” Ferroelectrics 383, 95.CrossRefGoogle Scholar
Wu, Q., Hu, Z., Wang, X. Z., and Chen, Y. (2003). “Synthesis and optical characterization of aluminum nitride nanobelts,” J. Phys. Chem. B 107, 9726.CrossRefGoogle Scholar
Xu, C. K., Xue, L., Yin, C., and Wang, G. (2003). “Formation and photoluminescence properties of AlN nanowires,” Phys. Status Solidi a 198, 329.CrossRefGoogle Scholar
Youngman, R. A., Harris, J. H., and Chernoff, D. A. (1989). “Structural evolution of AlN nano-structure: nanotips and Nanorods,” Ceram. Trans. 5, 309.Google Scholar
Zhao, Q., Zhang, H., Xu, X., Wang, Z., Xu, J., Yu, D., Li, G., and Su, F. (2005). “Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate,” App. Phy. Lett. 86, 193101.CrossRefGoogle Scholar
Zuo, S. B., Wang, J., Chen, X. L., Jin, S. F., Jiang, L. B., Bao, H. Q., Guo, L. W., Wei, S., and Wang, W. J. (2012). “Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer,” Cryst. Res. Technol. 47, 139–144.CrossRefGoogle Scholar