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Powder diffraction data of a new compound Al0.35GdGe2

Published online by Cambridge University Press:  29 February 2012

Lingmin Zeng ,
Jiejun He ,
Pingli Qin  and
Xiangzhong Wei
Lingmin Zeng*
Affiliation:
Key Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi, 530004, China
Jiejun He
Affiliation:
Key Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi, 530004, China
Pingli Qin
Affiliation:
School of Science, Wuhan Institute of Technology, Wuhan, Hubei, 430073, China Key Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education, Guangxi University, Nanning, Guangxi, 530004, China
Xiangzhong Wei
Affiliation:
Guangxi Traditional Chinese Medical University, Nanning, Guangxi, 530001, China
*
a)Author to whom correspondence should be addressed. Electronic mail: [email protected]
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Abstract

A new ternary compound Al0.35GdGe2 has been synthesized and studied by means of X-ray powder diffraction technique. The ternary compound Al0.35GdGe2 crystallizes in the orthorhombicwith the CeNiSi2 structure type (space group Cmcm, a=4.0874(2) Å, b=16.1499(5) Å,c=3.9372(1) Å, Z=4, and Dcalc=8.007 g/cm3).

Keywords

X-ray diffractionRietveld refinement
Type
New Diffraction Data
Information
Powder Diffraction , Volume 23 , Issue 1 , March 2008 , pp. 60 - 62
Copyright
Copyright © Cambridge University Press 2008

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References

Bodak, O. I., Gladyshevskii, E. I., and Hladyshevskii, E. I. (1969). “Crystal Structure of CeNiSi2 and Kindred Compounds,” Kristallografiya KRISAJ 14, 990–994.Google Scholar
Che, G. (1994). “Electrical Resistivity of the Gd(Al1−xM x)2 Compounds for M≡In, Ga, Pd, Sn, Si and Ge,” J. Alloys Compd. JALCEU 10.1016/0925-8388(94)91122-3 209, 337–340.CrossRefGoogle Scholar
ICDD (2002). “Powder diffraction file,” International Centre for Diffraction Data, edited by McClune, Frank, 12 Campus Boulevard, Newton Square, PA 19073-3272.Google Scholar
Marciniak, H., and Diduszko, R. (1997). DMPLOT: Plot view program for Rietveld refinement method, Version 3.38 (Computer Software), High Pressure Research Center, Warsaw, Poland.Google Scholar
Smith, G. S., and Snyder, R. L. (1979). “F N: A Criterion for Rating Powder Diffraction Patterns and Evaluating the Reliability of Powder-Pattern Indexing,” J. Appl. Crystallogr. JACGAR 10.1107/S002188987901178X 12, 60–65.CrossRefGoogle Scholar
Young, R. A., Larson, A. C., and Paiva-Santos, C. O. (1999). “User’s guide to program DBWS-9807a for Rietveld analysis of X-ray and neutron powder diffraction patterns with a PC and various other computers,” School of Physics, Georgia Institute of Technology, Atlanta, Georgia.Google Scholar
Zeng, L., and Franzen, H. F. (1998). “Synthesis and Crystal Structure of NdFe0.45Ge2 and HoFe0.33Ge2,” J. Alloys Compd. JALCEU 267, 86–89.CrossRefGoogle Scholar
Zhuravleva, M. A., Rangan, K. K., Lane, M., Brazis, P., Kannewurf, C. R., and Kanatzidis, M. G. (2001). “Flux Synthesis, Structure and Physical Properties of New Pseudo-Binary REAl3−xGex Compounds,” J. Alloys Compd. JALCEU 10.1016/S0925-8388(00)01411-0 316, 137–145.CrossRefGoogle Scholar