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High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

Published online by Cambridge University Press:  01 March 2012

W. J. Wang ,
K. Sugita ,
Y. Nagai ,
Y. Houchin ,
A. Hashimoto  and
A. Yamamoto
W. J. Wang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China and VBL, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
K. Sugita
Affiliation:
Department of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
Y. Nagai
Affiliation:
Department of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
Y. Houchin
Affiliation:
Department of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
A. Hashimoto
Affiliation:
Department of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
A. Yamamoto
Affiliation:
Department of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Abstract

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

Keywords

high resolution X-ray diffractionthin-film growthmetalorganic vapor phase epitaxyInNsemiconducting III-V materials
Type
Technical Articles
Information
Powder Diffraction , Volume 22 , Issue 3 , September 2007 , pp. 219 - 222
Copyright
Copyright © Cambridge University Press 2007

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