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Confirmation of the new technique for measuring the linear thermal expansion of silicon

Published online by Cambridge University Press:  10 January 2013

Liu Fengchao
Liu Fengchao
Affiliation:
Department of Physics, South China Normal University, Guangzhou 510631, China
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Abstract

This paper further confirms that the direct measurement of diffraction angles at different temperatures by using the X-ray diffractometer is better than measurement of the lattice parameters for the rapid and accurate determination of the linear thermal expansion of silicon. High purity silicon has the linear expansion coefficient, α= (2.45±0.05) × 10−6/°C at room temperature. This value does not change for doped P-type and N-type silicon.

Type
Research Article
Information
Powder Diffraction , Volume 8 , Issue 1 , March 1993 , pp. 36 - 38
Copyright
Copyright © Cambridge University Press 1993

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