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An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

Published online by Cambridge University Press:  05 March 2012

J. Xu ,
X. S. Wu ,
B. Qian ,
J. F. Feng ,
S. S. Jiang ,
W. S. Tan ,
C. J. Chen ,
X. Chen ,
M. H. Sun  and
Z. H. Wu
J. Xu
Affiliation:
Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
X. S. Wu*
Affiliation:
Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
B. Qian
Affiliation:
Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
J. F. Feng
Affiliation:
Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
S. S. Jiang
Affiliation:
Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
W. S. Tan
Affiliation:
Department of Applied Physics and Materials Chemistry Laboratory, Nanjing University of Science and Technology, Nanjing 210094, China
C. J. Chen
Affiliation:
BSRF, Institute of High Energy & Nuclear Physics, CAS, Beijing 100039, China
X. Chen
Affiliation:
BSRF, Institute of High Energy & Nuclear Physics, CAS, Beijing 100039, China
M. H. Sun
Affiliation:
BSRF, Institute of High Energy & Nuclear Physics, CAS, Beijing 100039, China
Z. H. Wu
Affiliation:
BSRF, Institute of High Energy & Nuclear Physics, CAS, Beijing 100039, China
*
a)Author to whom all correspondence should be addressed; electronic mail: [email protected]
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Abstract

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

Keywords

X-ray scatterGe–Si inverted hutsTEM
Type
Selected Papers from 2003 Chinese National Symposium on XRD
Information
Powder Diffraction , Volume 19 , Issue 4 , December 2004 , pp. 347 - 351
Copyright
Copyright © Cambridge University Press 2004

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