The fabrication of strong photocatalysts applied to the degradation of organic pollutants is necessary in environmental applications. In a single-stage method, acetate precursor and poly vinyl pyrolydine are used to produce ZnO nanostructures with various morphologies in annealing temperatures ranging from 300 °C to 900 oC. The physical properties of the prepared nanostructures were characterized by SEM, XRD and PL spectroscopy. The SEM images exhibit a variety of the as-prepared hexagonal zinc oxides including wires, rods, particles and porous network of welded particles of ZnO nanoparticles. The results of the photocatalytic degradation of methylene blue as an organic dye in aqueous suspension showed that the morphology of ZnO nanostructures influences on the photocatalytic efficiency of ZnO nanostructures, greatly. For the best result, the highest MB degradation occurs by ZnO nanowires within 16 minutes and in others samples, degradation of higher than 95 percent occurs within 20 minutes. The XRD and PL spectroscopy revealed neither VZn nor Oi are in all of samples but only VO−, VO2− and Zni exist in ZnO nanostructures.

Deep surface trap states present in hydrothermally grown ZnO nanorod (NR) arrays are monitored by photoelectrochemical and impedance spectroscopy. NR arrays were grown on a thin compact ZnO film deposited by pulsed laser deposition. Photocurrent responses upon square-wave illumination and lock-in detection of the as-grown NR arrays in the presence of Na2SO3 at pH 10 were characterized by a complex potential dependence indicating the presence of deep trap states. At a given frequency of light perturbation, the photocurrent amplitude increases as the potential bias is shifted towards values more positive than the flat band potential. Increasing the potential further than 0.8 V positive to the flat band potential leads to a decrease in the photocurrent amplitude. The potential of maximum photocurrent amplitude overlaps with a sharp decrease in the interfacial capacitance. The dependence of the photocurrent amplitude on bias potential strongly suggests the presence of deep electron trap states. The effect of the deep trap states are minimized by annealing of the NR arrays in air at 340° C.