Light-Emitting Electrochemical Cells (LECs) consist of solution processable ionic light-emitting materials and use air stable electrodes. Their operational mechanism relies on both ionic and electronic conduction. The dynamic behavior is primarily determined by the ionic conductivity. Here, we demonstrate that with increasing temperature the LECs turn-on faster yet without decreasing the efficiency. This is due to the activation energy of ionic transport and the temperature independent photoluminescence quantum yields.

Light-emitting electrochemical cells (LECs) are one of the simplest electroluminescent devices. The possibility to be processed from solution and to operate with air-stable materials makes them an attractive alternative to organic light emitting diodes (OLEDs). Still their efficiencies are below those obtained in OLEDs. Additionally the best efficiencies were reported at low luminances and sustained for a short period of time. Here we show that for a LEC employing an orange-emitting charged iridium complex that is driven using a pulsed driving scheme high efficiencies of up to 20.5 cd A-1 can be obtained at high luminance and sustained over the device lifetime. It is also shown that the efficiency depends strongly on the current density applied.

In this study, we fabricated blue OLEDs with quantum well structure (QWS) using four different blue emissive materials such as DPVBi, ADN and DPASN, and BAlq as QWS material. Conventional QWS blue OLEDs used to be composed of emissive layer and charge blocking layer with lower HOMO-LUMO energy level, but we designed triple emitting layer for more significant hole-electron recombination in EML and a wider region of exciton generation as forming QWS spontaneously. The structure of triple emitting layered blue OLED is ITO / NPB(700 Å) / X(100 Å) / BAlq(100 Å) /X (100 Å) / Bphen(300 Å) / Liq(20 Å) / Al(1200 Å) (X= DPVBi, ADN, DPASN). HOMO-LUMO energy levels of DPVBi, ADN, DPASN and BAlq were 2.8-5.9, 2.6-5.6, 2.3-5.2 and 2.9-5.9 eV, respectively. The maximum luminous efficiency was 5.32 cd/A at 3.5 V in a blue OLED with DPASN / BAlq / DPASN QWS.

In this study, we demonstrate blue organic light-emitting diodes (OLEDs) with a dual emitting layer (EML) configuration consisting of fluorescent and phosphorescent emitting materials. We investigated the influence of dopants on the electrical and optical characteristics of devices when controlling the fluorescent dopant concentration. The current density and luminance of device B doped with 12wt% BCzVBi was 141.6 mA/cm2 and 6582 cd/m2 at 10V, respectively. In addition, a maximum luminous efficiency of 8.11 cd/A, was achieved from device B. The corresponding Commission Internationale de l’E´ clairage (CIExy) coordinates of device D doped with 5wt% BCzVBi were (0.143, 0.255) at 6V.

A novel structure for Organic Thin-Film Transistor (OTFT) is here presented. The devices are fabricated using a one-mask, photolithographic self-alignment technique which can be performed with standard photoresists and without further chemical treatments. This technique, combined with a novel technology for the realization of low voltage OTFTs, allows a dramatic reduction of the parasitic capacitances thus leading to a remarkable cut-off frequency. In this paper, the main electrical parameters of low voltage, self-aligned devices are reported, and a complete frequency characterization of the devices is given. These characteristics make the reported approach suitable for the development of basic circuitries for frequency applications.

The electroluminescent characteristics of blue organic light-emitting diodes(BOLEDs) were fabricated with single emitting layer using host-dopant system and doped charge carrier transport layers. The structure of the high efficiency BOLED device was; NPB(600Å)/NPB:BCzVBi-7%(100Å)/ADN:BCzVBi-7%(300Å)/BAlq:BCzVBi-7%(100Å)/BAlq(200Å)/Liq(20Å)/Al(1200Å) to optimize probability of exciton generation by doping BCzVBi in emitting layer and hole/electron transport layers(HTL/ETL) as well. Luminance and luminous efficiency of BOLED doped BCzVBi in EML and HTL/ETL improved from 10090 cd/m2 at 9.5V and 6.44 cd/A at 4.0V to 13190 cd/m2 at 9.5V and 7.64 cd/A at 4.0V about 30% and 18%, respectively, with CIE coordinates of (0.14, 0.17) comparing to BOLED doped BCzVBi in EML only

For the construction of highly conductive printed electrodes on a polymeric substrate with a low glass transition temperature, the development of a low temperature sinterable conductive ink has been a crucial issue in printed electronics and display applications. In this work, we introduce a novel type of self-sinterable silver ink, whose sintering is triggered at a low temperature and completed with the aid of its own exothermic reaction, and propose its exothermic reaction mechanism. Although individual components of this self-sinterable silver ink, Ag2O and silver carboxylate, exhibit endothermic behaviors, their mixture form shows a strong exothermic reaction when heated at 150 °C. It is found that the dissociated form of the used silver carboxylate contributes to the reduction of Ag2O to Ag through its recursive reaction and produces silver nanoparticles. The major source of an exothermic reaction results from the nucleation and fusion of silver nanoparticles.