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Zone-Melting Recrystallization of Semiconductor Films

Published online by Cambridge University Press:  15 February 2011

M. W. Geis ,
Henry I. Smith ,
B-Y. Tsaur ,
John C. C. Fan ,
D. J. Silversmith ,
R. W. Mountain  and
R. L. Chapman
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
D. J. Silversmith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

The use of zone melting recrystallization (ZMR) to prepare large-grain(and in some cases single-crystal) semiconductor films is reviewed, with emphasis on recent work on Si on SiO2. Encapsulants are generally required to minimize contamination and decomposition, induce a crystalline texture,improve surface morphology and prevent agglomeration. In the case of Si, the solid-liquid interface is faceted, which gives rise to subboundaries. These can be entrained by laterally modulating the temperature through the use of an optical absorber on top of the encapsulant. Control of thermal gradients and in-plane crystallographic orientation are important for reliable entrainment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 477
Copyright
Copyright © Materials Research Society 1983

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References

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