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Zone Melting Recrystallization of GaAs Films on Oxidized Si

Published online by Cambridge University Press:  28 February 2011

Weiwen Zhu  and
Weiyuan Wang
Weiwen Zhu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Weiyuan Wang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

In this paper, GaAs SOI consisting of MBE deposited GaAs films on oxidized Si was recrystallized by narrow-zone melting in a RF induction graphite strip heater at a rate of 1–1.2 mm/s. The original grain size of MBE GaAs SOI films is smaller than 800 Å, and the electron diffraction patterns appear as typical polycrystalline rings as determined by SEM and ED, respectively. After zone melting recrystallization, the grain size of GaAs SOI films increases to 1 µm, the prefered ˂111˃ diffraction spots appear apparently, and the carrier concentrations and electron mobility amount to 3×1017cm−3 and 1.1×103cm2/v.s as determined by Hall measurement. The AES Ga/As signal ratio of the GaAs SO before and after recrystallization is the same as that of the GaAs single crystal. The possible application of GaAs SOI to devices is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 101
Copyright
Copyright © Materials Research Society 1986

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References

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