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ZnO Thin Films of High Crystalline Quality Deposited on Sapphire and GaN Substrates by High Temperature Sputtering

Published online by Cambridge University Press:  04 April 2011

Michał A. Borysiewicz ,
Iwona Pasternak ,
Elżbieta Dynowska ,
Rafał Jakieła ,
Marek Wzorek ,
Valery Kolkovski ,
Anna Dużyńska ,
Eliana Kamińska  and
Anna Piotrowska
Michał A. Borysiewicz
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
Iwona Pasternak
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
Elżbieta Dynowska
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Rafał Jakieła
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Marek Wzorek
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
Valery Kolkovski
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Anna Dużyńska
Affiliation:
Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland
Eliana Kamińska
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
Anna Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
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Abstract

Single orientation ZnO (00.2) films were deposited by means of high temperature high vacuum reactive magnetron sputtering onto Al2O3 (0001) and GaN (0001) substrates. In order to obtain films of high crystalline quality a novel approach to ZnO sputter deposition was employed, adapting the practice used in MBE technology, of using a MgO buffer layer deposited on sapphire at a high-temperature followed by a ZnO nucleation layer deposited at low temperature. ZnO films were also grown on epitaxial GaN/Al2O3 substrates where the GaN layer was treated as the buffer layer. Following the deposition, all samples were annealed ex-situ in an O2 flow at 800°C. The obtained ZnO films have a lattice constant c equal to 5.2036 Å and 5.214 Å for the films deposited on Al2O3 and GaN substrates, respectively. Secondary ion mass spectroscopy depth profiles, scanning and transmission electron microscopy cross sectional images and atomic force microscope were used to characterize the structural properties of the films. Electrical properties were assessed using Hall effect measurement. Photoluminescence spectra were also taken.

Keywords

oxidesputteringtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1315: Symposium MM – Transparent Conducting Oxides and Applications , 2011 , mrsf10-1315-mm10
Copyright
Copyright © Materials Research Society 2011

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References

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