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ZnO on Si3N4 Bimorphs with Large Deflections

Published online by Cambridge University Press:  25 February 2011

Wai-Shing Choi  and
Jan G. Smits
Wai-Shing Choi
Affiliation:
Sensors, Actuators and Micromechanics Laboratories, Boston University, 44 Cummington Street, Boston MA 02215
Jan G. Smits
Affiliation:
Sensors, Actuators and Micromechanics Laboratories, Boston University, 44 Cummington Street, Boston MA 02215
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Abstract

Piezoelectric bimorphs and piezoelectric strain sensors based on sputtered ZnO films were fabricated on Si3N4 cantilever beams to form tactile sensors. The sensors were used to determine object positions. Deflections of the bimorphs showed a quadratic dependence on the applied voltages. Deflection as large as 1166 μm were registered for a bimorph of 2980 μm long. The apparent d33 of ZnO under a bias of -4 volts was - 103 × 1O-12 m/V, which was approximately 20 times larger than the previously reported values of -5.12 × 10-12m/V. The large deflections of the bimorphs were due to the quadratic effect under strong electric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 749
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Sawyer, C. B., Proceedings Institute of Radio Engineers 19 (11), 2020–2029 (Nov 1931).Google Scholar
[2] Steel, M. R., Harrison, F. and Harper, P. G., J. Phys. D: Appl. Phys. 11, 979–989 (1978).Google Scholar
[3] Smits, J. G. and Choi, W., IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 38 (3), 256–270 (1991).CrossRefGoogle Scholar
[4] Denkmann, W. J., Nickell, R. E., and Stickler, D. C., IEEE Transactions on Audio and Electroacoustics AU-21 (4), 317–324 (1973).CrossRefGoogle Scholar
[5] Nakamura, K., Sasaki, H., and Shimizu, H., Electronics Letters 17 (14), 507–509 (1981)Google Scholar
[6] Chen, P. L., Muller, R. S., Jolly, R. D., Halac, G. L., White, R. M., Andrews, A. P., Lim, T. C., and Motamedi, M. E., IEEE Transactions on Electron Devices, ED–29 (1), 27–33 (1982).CrossRefGoogle Scholar
[7] Smits, J. G., in Proceedings of the Symposium on Force, Displacement, Pressure and Flow Sensors, 135–151 (Sep. 1982).Google Scholar
[8] Blom, F. R., Ph.D. Thesis, Twente University, 1989.Google Scholar
[9] Andrews, A. P., United States Patent No. 4 517 486 (14 May 1985).Google Scholar
[10] Bailey, T. and Hubbard, J. E. Jr, J. Guidance 8 (5), 605–611 (1985).Google Scholar
[11] Ricketts, D., J. Acoust. Soc. Am. 80 (3), 723–726 (1986).CrossRefGoogle Scholar
[12] Baz, A. and Poh, S., J. Sound and Vibration 126 (2), 327–343 (1988).Google Scholar
[13] Tzou, H. S. and Gadre, M., AIAA 26 (8), 1014–1017 (1988).Google Scholar
[14] Fuller, C. R., Hansen, C. H. and Snyder, S. D., Journal of Sound and Vibration 150 (2). 179–190 (1991).CrossRefGoogle Scholar
[15] Smits, J. G., Sensors and Actuators A 21 – 23, pp. 203–206 (1990).Google Scholar
[16] Lynch, C. T., Practical Handbook of Materials Science (CRC Press, Inc., 1989), pp. 321–322.Google Scholar
[17] Weber, M. J., Handbook of Laser Science and Technolgy IV, part 2, (CRC Press Inc., 1986), pp. 64–65.Google Scholar
[18] Hellwege, K. H. and Hellwege, A. M., Landolt - Börnstein, Vol. 11 – III (Springer-Verlag Berlin-Heidelberg, Germany, 1979). p. 370.Google Scholar
[19] Mason, W. P., Physical Review 74 (9). pp. 1134–1147 (1948).CrossRefGoogle Scholar