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ZnO Nanowire/p-GaN Heterojunction LEDs

Published online by Cambridge University Press:  01 February 2011

Heiko O. Jacobs ,
Jesse Cole ,
Amir M. Dabiran  and
Heiko O. Jacobs
Heiko O. Jacobs
Affiliation:
[email protected], University of Minnesota, Electrical and Computer Engineering, 200 Union St. SE, Minneapolis, MN, 55455, United States
Jesse Cole
Affiliation:
[email protected], University of Minnesota, Department of Electrical and Computer Engineering, 200 Union Street SE, Minneapolis, MN, 55455, United States
Amir M. Dabiran
Affiliation:
[email protected], SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN, 55344, United States
Heiko O. Jacobs
Affiliation:
[email protected], University of Minnesota, Department of Electrical and Computer Engineering, 200 Union Street SE, Minneapolis, MN, 55455, United States
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Abstract

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of the current-voltage characteristics and electroluminescence spectra is presented to determine the transport mechanism and location of electron hole recombination. Reverse bias transport and luminescence are attributed to hot-hole injection from the ZnO nanowires into the GaN film through tunneling breakdown. Forward bias transport and luminescence are attributed to hole injection from the GaN into the ZnO and recombination at defect states inside the ZnO yielding distinct color variations between individual wires. Major resistive losses occurred in the GaN lateral thin film connecting to the vertical ZnO nanowires.

Keywords

devicesoptoelectronicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1018: Symposium EE – Applications of Nanotubes and Nanowires , 2007 , 1018-EE12-08
Copyright
Copyright © Materials Research Society 2007

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